NPN SILICON RF POWER TRANSISTOR
The ASI VMB150-28 is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
VCB
VCE
P
DISS
TJ
T
STG
140 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
10 A
60 V
35 V
VMB150-28
PACKAGE STYLE .500 6L FLG
A
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
MINIMUM
inches / mm
.150 / 3.43 .160 / 4.06
.210 / 5.33
.835 / 21.21 .865 / 21.97
.490 / 12.45
.003 / 0.08
.970 / 24.64 .980 / 24.89
.090 / 2.29 .105 / 2.67
.150 / 3.81
.120 / 3.05 .135 / 3.43
C
D
2x ØN
FULL R
B
.725/18,42
G
H
E
F
I
J
K
L
MAXIMUM
inches / mm
M
.045 / 1.14
.125 / 3.18
.725 / 18.42
.220 / 5.59
.210 / 5.33.200 / 5.08
.510 / 12.95
.007 / 0.18
.170 / 4.32
.285 / 7.24
θθJC
CHARACTERISTICS T
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 50 mA 35 V
CEO
BV
IC = 50 mA RBE = 10 Ω 60 V
CER
BV
IE = 10 mA 4.0 V
EBO
I
VE = 28 V 5 mA
CES
hFE VCE = 5.0 V IC = 1.0 A 10 100 ---
Cob VCB = 28 V f = 1.0 MHz
PG
ηηC
0.65 OC/W
= 25 OC
C
VCC = 28 V P
= 150 W f = 88 MHz
OUT
335 pF
13
60
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.