ASI VMB10-12S Datasheet

DESCRIPTION:

ORDER CODE: ASI10742

VMB10-12S

NPN SILICON RF POWER TRANSISTOR

The ASI VMB10-12S is Designed for

FEATURES:

•

•

• Omnigold™ Metalization System

MAXIMUM RATINGS

IC 2.0 A

V

CBO

V

18 V

CEO

V

36 V

CES

V

4.0 V

EBO

P

DISS

20 W @ TC = 25 OC

TJ -65 OC to +200 OC

T

-65 OC to +150 OC

STG

θθJC 5.0 OC/W

36 V

PACKAGE STYLE .380 4L STUD

ØC

A

E

F

H

G

MAXIMUM

inches / mm

.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30

.490 / 12.45.450 / 11.43

.750 / 19.05

I

J

DIM

A
B
C
D
E
F
G
H
I
J

.112x45°

B

D

#8-32 UNC-2A

MINIMUM

inches / mm

.220 / 5.59 .230 / 5.84

.980 / 24.89

.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54

.090 / 2.29 .100 / 2.54
.155 / 3.94 .175 / 4.45

CHARACTERISTICS T

= 25 OC

C

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS

BV

IC = 15 mA 18 V

CEO

BV

IC = 50 mA 36 V

CES

BV

IE = 2.5 mA 4.0 V

EBO

I

VCB = 12.5 V 1.0 mA

CBO

hFE VCE = 5.0 V IC = 250 mA 5.0 200 ---

COB VCB = 12.5 V f = 1.0 MHz

P

G

VCC = 12.5 V P

OUT

= 10 W f = 88 MHz

ηηC

65 pF

13

60

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone] 1/1

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