ASI VMB100-12 Datasheet
Specifications are subject to change without notice.
DESCRIPTION:
ORDER CODE: ASI10747
NPN SILICON RF POWER TRANSISTOR
The ASI VMB100-12 is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 20 A
V
CBO
V
18 V
CEO
V
4.0 V
EBO
P
DISS
270 W @ TC = 25 OC
TJ -65 OC to +200 OC
T
-65 OC to +150 OC
STG
36 V
VMB100-12
PACKAGE STYLE .500 6L FLG
A
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
MINIMUM
inches / mm
.150 / 3.43 .160 / 4.06
.210 / 5.33
.835 / 21.21 .865 / 21.97
.490 / 12.45
.003 / 0.08
.970 / 24.64 .980 / 24.89
.090 / 2.29 .105 / 2.67
.150 / 3.81
.120 / 3.05 .135 / 3.43
C
D
2x ØN
FULL R
B
.725/18,42
G
H
F
I
J
.045 / 1.14
.125 / 3.18
.725 / 18.42
E
K
L
MAXIMUM
inches / mm
.220 / 5.59
.210 / 5.33.200 / 5.08
.510 / 12.95
.007 / 0.18
.170 / 4.32
.285 / 7.24
M
θθJC 0.65 OC/W
CHARACTERISTICS T
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 50 mA 36 V
CBO
BV
IC = 100 mA 36 V
CES
BV
IC = 100 mA 18 V
CEO
BV
IE = 10 mA 4.0 V
EBO
I
VCE = 15 V 15 mA
CES
hFE VCE = 5.0 V IC = 5.0 A 20 --- ---
COB VCB = 12.5 V f = 1.0
P
G
ηη
C
= 25 OC
C
MHz
VCE = 12.5 V P
= 100 W f = 88 MHz
OUT
400 pF
10
60
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
dB
%
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