ASI VLB70-12S Datasheet

DESCRIPTION:
ORDER CODE: ASI12738
NPN SILICON RF POWER TRANSISTOR
The ASI VLB70-12S is Designed for
FEATURES:
Omnigold™ Metalization System
MAXIMUM RATINGS
IC 12.0 A
V
CBO
V
18 V
CEO
V
3.5 V
EBO
P
DISS
183 W @ TC = 25 OC
TJ -65 OC to +200 OC
T
-65 OC to +150 OC
STG
36 V
VLB70-12S
PACKAGE STYLE .380 4L STUD
DIM
A B C D E F G H I J
.112x45°
B
D
#8-32 UNC-2A
MINIMUM
inches / mm
.220 / 5.59 .230 / 5.84
.980 / 24.89
.370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54
.090 / 2.29 .100 / 2.54 .155 / 3.94 .175 / 4.45
ØC
A
E
F
H
G
MAXIMUM
inches / mm
.385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30
.490 / 12.45.450 / 11.43
.750 / 19.05
I
J
θθJC 1.05 OC/W
CHARACTERISTICS T
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 50 mA 36 V
CBO
BV
IC = 100 mA 36 V
CES
BV
IC = 50 mA 18 V
CEO
BV
IE = 10 mA 3.5 V
EBO
I
VCE = 15 V 10 mA
CES
hFE VCE = 5.0 V IC = 5.0 A 10 --- ---
COB VCB = 12.5 V f = 1.0
GP
ηηC
= 25 OC
C
MHz
VCE = 12.5 V P
= 70 W f = 50 MHz
OUT
270 pF
10
60
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 1/1
dB
%
Specifications are subject to change without notice.
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