ASI VLB10-12S Datasheet
DESCRIPTION:
ORDER CODE: ASI10734
VLB10-12S
NPN SILICON RF POWER TRANSISTOR
The ASI VLB10-12S is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
V
CBO
V
CEO
V
CES
V
EBO
P
DISS
TJ
T
STG
θθJC 5.0 OC/W
20 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
2.0 A
36 V
18 V
36 V
4.0 V
PACKAGE STYLE .380 4L STUD
A
E
F
I
H
G
MAXIMUM
inches / mm
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45.450 / 11.43
.750 / 19.05
J
DIM
A
B
C
D
E
F
G
H
I
J
.112x45°
B
ØC
D
#8-32 UNC-2A
MINIMUM
inches / mm
.220 / 5.59 .230 / 5.84
.980 / 24.89
.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54
.090 / 2.29 .100 / 2.54
.155 / 3.94 .175 / 4.45
CHARACTERISTICS T
= 25 OC
C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 15 mA 18 V
CEO
BV
IC = 50 mA 36 V
CES
BV
IE = 2.5 mA 4.0 V
EBO
I
VCB = 12.5 V 1.0 mA
CBO
hFE VCE = 5.0 V IC = 250 mA 5.0 200 ---
COB VCB = 12.5 V f = 1.0 MHz
P
G
VCC = 12.5 V P
OUT
= 10 W f = 50 MHz
ηηC
65 pF
10
60
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
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