ASI VHB50-28S Datasheet

DESCRIPTION:

ORDER CODE: ASI10730

VHB50-28S

NPN SILICON RF POWER TRANSISTOR

The ASI VHB50-28S is Designed for

FEATURES:

•

•

• Omnigold™ Metalization System

MAXIMUM RATINGS

IC

V

CBO

V

CEO

V

EBO

P

DISS

TJ

T

STG

θθJC

-65 OC to +200 OC

-65 OC to +150 OC

6.5 A
65 V
35 V

4.0 V

75 W

2.3 OC/W

PACKAGE STYLE .380 4L STUD

ØC

A

E

I

H

J

G

F

MAXIMUM

inches / mm

.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30

.490 / 12.45.450 / 11.43

.750 / 19.05

DIM

A
B
C
D
E
F
G
H
I
J

.112x45°

B

D

#8-32 UNC-2A

MINIMUM

inches / mm

.220 / 5.59 .230 / 5.84

.980 / 24.89

.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54

.090 / 2.29 .100 / 2.54
.155 / 3.94 .175 / 4.45

CHARACTERISTICS T

= 25 OC

C

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS

BV

IC = 200 mA 35 V

CEO

BV

IC = 200 mA 65 V

CES

BV

IE = 10 mA 4.0 V

EBO

I

VCB = 28 V 2.0 mA

CBO

I

VCE = 28 V TC = 125 OC

CES

hFE VCE = 5.0 V IC = 500 mA 5.0 --- ---

Cob VCB = 28 V f = 1.0 MHz

fT VCE = 10 V IC = 500 mA f = 100 MHz

P

G

VCE = 28 V P

OUT

ηηC

= 50 W f = 150 MHz

10 mA

80 pF

200 MHz

6.0
60

dB

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone] 1/1

Specifications are subject to change without notice.

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