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NPN SILICON RF POWER TRANSISTOR
The ASI VHB40-12S is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 5.0 A
V
CBO
V
18 V
CEO
V
4.0 V
EBO
P
DISS
70 W @ TC = 25 OC
TJ -65 OC to +200 OC
T
-65 OC to +150 OC
STG
36 V
VHB40-12S
PACKAGE STYLE .380 4L STUD
ØC
A
E
F
H
G
MAXIMUM
inches / mm
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45.450 / 11.43
.750 / 19.05
I
J
DIM
A
B
C
D
E
F
G
H
I
J
.112x45°
B
D
#8-32 UNC-2A
MINIMUM
inches / mm
.220 / 5.59 .230 / 5.84
.980 / 24.89
.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54
.090 / 2.29 .100 / 2.54
.155 / 3.94 .175 / 4.45
θθJC 2.9 OC/W
CHARACTERISTICS T
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 50 mA 36 V
CBO
BV
IC = 50 mA 36 V
CES
BV
IC = 50 mA 18
CEO
BV
IE = 10 mA 4.0 V
EBO
I
VCE = 28 V 5.0 mA
CES
hFE VCE = 5.0 V IC = 5.0 A 20 200 ---
Cob VCB = 12.5 V f = 1.0 MHz
GP
ηηC
= 25 OC
C
VCC = 12.5 V P
= 40 W f = 175 MHz
OUT
135 pF
8.5
60
dB
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
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