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Specifications are subject to change without notice.
NPN SILICON RF POWER TRANSISTOR
The ASI VHB1-28T is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
0.4 A
55 V
30 V
3.5 V
V
V
V
P
T
IC
CBO
CEO
EBO
DISS
TJ
STG
5 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +200 OC
VHB1-28T
PACKAGE STYLE TO-39
Ø A
F
G
DIM
A
B
C
D
E
F
G
H
MINIMUM
inches / mm
.029 / 0.740
.028 / 0.720
.335 / 8.510
.305 / 7.750
.240 / 6.100
.016 / 0.407 .020 / 0.508
.200 / 5.080
.500 / 12.700
CB
45°
Ø D
E
H
MAXIMUM
inches / mm
.045 / 1.140
.034 / 0.860
.370 / 9.370
.335 / 8.500
.260 / 6.600
θθJC
CHARACTERISTICS T
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 5.0 mA 30 V
CEO
BV
IC = 5.0 mA RBE = 10 Ω 55 V
CER
BV
IC = 0.1 mA 55 V
CBO
BV
IE = 0.1 mA 3.5 V
EBO
I
VC = 55 V VBE = -1.5 V 100 µµA
CEX
I
VE = 28 V 20 µµA
CEO
(S)
V
IC = 100 mA IB = 20 mA 1.0 V
CE
hFE
COB VCB = 28 V f = 1.0 MHz
PG
ηη
35 OC/W
= 25 OC
C
VCE = 5.0 V IC = 50 mA
IC = 360 mA
VCE = 28 V P
= 1.0 W f = 175 MHz
OUT
10
5.0
3.0 pF
13
200
60
---
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1