ASI VHB128-28 Datasheet
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS T
C
= 25 OC
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CBO
IC = 100 mA 65 V
BV
CES
IC = 100 mA 65 V
BV
CEO
IC = 100 mA 35
BV
EBO
IE = 10 mA 4.0 V
I
CES
VCE = 30 V 15 mA
hFE VCE = 5.0 V IC = 5.0 A 20 200 ---
COB VCB = 28 V f = 1.0 MHz
250 pF
PG
ηηC
VCE = 28 V P
OUT
= 125 W f = 175 MHz
9.0
60
dB
%
NPN SILICON RF POWER TRANSISTOR
VHB125-28
DESCRIPTION:
The ASI VHB125-28 is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
20 A
V
CBO
65 V
V
CEO
36 V
V
CES
65 V
V
EBO
4.0 V
P
DISS
270 W @ TC = 25 OC
TJ
-65 OC to +200 OC
T
STG
-65 OC to +150 OC
θθJC
0.65 OC/W
PACKAGE STYLE .500 6L FLG
ORDER CODE: ASI10731
MINIMUM
inches / mm
.490 / 12.45
.210 / 5.33
.003 / 0.08
B
C
D
E
F
G
A
MAXIMUM
.220 / 5.59
.007 / 0.18
.510 / 12.95
inches / mm
.725 / 18.42
H
DIM
K
L
I
J
.970 / 24.64 .980 / 24.89
.170 / 4.32
N
M
.120 / 3.05 .135 / 3.43
.150 / 3.43 .160 / 4.06
.125 / 3.18
.090 / 2.29 .105 / 2.67
.285 / 7.24
.150 / 3.81
.045 / 1.14
E
F
.725/18,42
I
G
J
K
L
M
A
D
C
B
2x ØN
FULL R
H
.835 / 21.21 .865 / 21.97
.210 / 5.33.200 / 5.08
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