ASI VHB1-12T Datasheet
DESCRIPTION:
ORDER CODE: ASI10711
VHB1-12T
NPN SILICON RF POWER TRANSISTOR
The ASI VHB1-12T is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
400 mA (MAX)
40 V
20 V
40 V
2.0 V
3.5 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +200 OC
V
V
V
V
P
T
IC
CBO
CEO
CER
EBO
DISS
TJ
STG
θθJC
20 OC/W
PACKAGE STYLE TO-39
DIM
Ø A
MINIMUM
inches / mm
A
B
C
D
E
F
G
H
.029 / 0.740
.028 / 0.720
.335 / 8.510
.305 / 7.750
.240 / 6.100
.016 / 0.407 .020 / 0.508
F
G
E
.200 / 5.080
.500 / 12.700
45°
H
CB
Ø D
MAXIMUM
inches / mm
.045 / 1.140
.034 / 0.860
.370 / 9.370
.335 / 8.500
.260 / 6.600
CHARACTERISTICS T
= 25 OC
C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 5.0 mA 20 V
CEO
BV
IC = 5.0 mA RBE = 10 Ω 40 V
CER
BV
IE = 100 µA 2.0 V
EBO
I
VCE = 12 V 0.2 mA
CEO
hFE VCE = 5.0 V IC = 100 mA 10 200 ---
V
IC = 100 mA IB = 20 mA 0.5 Vdc
CE(SAT)
COB VCB = 12.5 V f = 1.0 MHz
P
G
VCE = 12.5 V P
OUT
= 1.0 W f = 175 MHz
ηηC
4.0 pF
10
60
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
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