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Specifications are subject to change without notice.
VHB10-28S
NPN SILICON RF POWER TRANSISTOR
The ASI VHB10-28S is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
1.0 A
65 V
35 V
65 V
4.0 V
13.0 W
V
V
V
V
P
T
IC
CBO
CEO
CES
EBO
DISS
TJ
STG
-65 OC to +200 OC
-65 OC to +150 OC
θθJC
5.5 OC/W
PACKAGE STYLE .380 4L STUD
DIM
A
B
C
D
E
F
G
H
I
J
.112x45°
B
D
#8-32 UNC-2A
MINIMUM
inches / mm
.220 / 5.59 .230 / 5.84
.980 / 24.89
.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54
.090 / 2.29 .100 / 2.54
.155 / 3.94 .175 / 4.45
ØC
A
E
I
H
J
G
F
MAXIMUM
inches / mm
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45.450 / 11.43
.750 / 19.05
CHARACTERISTICS T
= 25 OC
C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 200 mA 65 V
CBO
BV
IC = 200 mA 65 V
CES
BV
IC = 200 mA 35 V
CEO
BV
IE = 10 mA 4.0 V
EBO
I
VCB = 30 V 1.0 mA
CBO
hFE VCE = 5.0 V IC = 200 mA 5.0 --- --Cob VCB = 28 V f = 1.0 MHz
P
G
ηη
C
VCC = 28 V P
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
= 10 W f = 175 MHz
OUT
15 pF
10
60
dB
%