ASI VHB10-12F Datasheet
Specifications are subject to change without notice.
DESCRIPTION:
ORDER CODE: ASI10712
NPN SILICON RF POWER TRANSISTOR
The ASI VHB10-12F is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
V
CBO
V
CEO
V
CES
V
EBO
P
DISS
TJ
T
STG
θθJC
20 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
2.0 A
36 V
18 V
36 V
4.0 V
8.8 OC/W
VHB10-12F
PACKAGE STYLE .380 4L FLG
.112 x 45°
A
C
D
E
Ø.125 NOM.
FULL R
J
.125
I
H
G
MAXIMUM
inches / mm
.980 / 24.89
.385 / 9.78
.105 / 2.67.085 / 2.16
.280 / 7.11
DIM
B
F
MINIMUM
inches / mm
A
B
C
D
E
F
G
H
I
J
.220 / 5.59 .230 / 5.84
.785 / 19.94
.720 / 18.29 .730 / 18.54
.970 / 24.64
.004 / 0.10 .006 / 0.15
.160 / 4.06 .180 / 4.57
.240 / 6.10 .255 / 6.48
CHARACTERISTICS T
= 25 OC
C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 15 mA 18 V
CEO
BV
IC = 50 mA 36 V
CES
BV
IE = 2.5 mA 4.0 V
EBO
I
VCB = 12.5 V 1.0 mA
CBO
hFE VCE = 5.0 V IC = 250 mA 5.0 200 ---
COB VCB = 12.5 V f = 1.0 MHz
P
G
ηη
C
VCC = 12.5 V P
OUT
= 10 W f = 175 MHz
45 pF
10
dB
60
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
%
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