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Silicon N-Channel Enhancement Mode
The VFT300-28 is Designed for
Wideband High Power VHF Amplifier
Applications operating up to 250 MHz.
FEATURES:
• PG = 14 dB Typical at 175 MHz
• ηηD = 55% Typ. at P
• Omnigold™ Metalization System
MAXIMUM RATINGS
I
D
V
(BR)DSS
V
DGR
V
GS
P
DISS
T
J
T
STG
θθ
JC
300 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
= 300 Watts
OUT
16 A
65 V
65 V
± 40 V
0.6 OC/W
VHF POWER MOSFET
PACKAGE STYLE .400 BAL FLG (D)
A
.080x45°
.1925
E
D
C
G G
H
MINIMUM
inches / mm
.220 / 5.59 .230 / 5.84
.380 / 9.65
.003 / 0.08
.060 / 1.52
.100 / 2.54 .115 / 2.92
.210 / 5.33
.125 / 3.18
.435 / 11.05
DIM
I
A
B
C
D
.580 / 14.73
E
F
G
1.090 / 27.69 1.105 / 28.07
H
1.335 / 33.91 1.345 / 34.16
I
J
K
L
M
.850 / 21.59 .870 / 22.10
N
VFT300-28
B
F
G
N
D
FULL R
MAXIMUM
inches / mm
.390 / 9.91
.620 / 15.75
.007 / 0.18
.070 / 1.78
.230 / 5.84
.407 / 10.34.395 / 10.03
(4X).060 R
M
Sources are connected
L
J
K
to flange
CHARACTERISTICS T
= 25 OC
C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
V
(BR)DSS
I
I
V
V
G
C
C
C
G
DSS
GSS
ηη
GS
DS
FS
iss
oss
rss
PS
D
VGS = 0 V IDS = 100 mA 65 V
VDS = 28 V VGS = 0 V 5.0 mA
VDS = 0 V VGS = 20 V 1.0 µµA
VDS = 10 V ID = 100 mA 1.0 5.0 V
VGS = 10 V ID = 10 A 1.5 V
VDS = 10 V ID = 5 A 3500 mS
375
VGS = 28 V VDS = 0 V F = 1.0 MHz
188
pF
26
VDD = 28 V IDQ = 2 x 250 mA P
f = 175 MHz
= 300 W
OUT
12
50
14
55
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
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A D V A N C E D S E M I C O N D U C T O R, I N C.
ERROR! REFERENCE SOURCE NOT FOUND.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • TELEX: 18-2651 • FAX (818) 765-3004