ASI VFT150-50 Datasheet
MINIMUM
TYPICAL
MAXIMUM
N-Channel Enhancement Mode
DESCRIPTION:
VFT150-50
VHF POWER MOSFET
The VFT150-50 is a N-Channel
Enhancement Mode RF Power
MOSFET Designed for AM/FM Power
Amplifier Applications up to 175 MHz.
FEATURES:
• PG = 13.5 dB Typical at 175 MHz
• 10:1 Load VSWR Capability
• Omnigold™ Metalization System
MAXIMUM RATINGS
V
P
T
I
DSS
V
DISS
T
STG
θθ
D
GS
JC
300 W @ TC = 25 OC
J
-65 OC to +200 OC
-65 OC to +150 OC
16 A
125 V
± 30 V
0.6 OC/W
PACKAGE STYLE .500 4L FLG
.112x45°
D
F
G
.125 / 3.18
.125 / 3.18
L
Ø.125 NOM.
K
J
I
MAXIMUM
inches / mm
.230 / 5.84
.255 / 6.48
.7.30 / 18.54
.980 / 24.89
.110 / 2.79
.175 / 4.45
.280 / 7.11
1.050 / 26.67
DIM
A
FULL R
C
B
E
H
MINIMUM
inches / mm
A
B
C
D
E
F
G
H
I
J
K
L
.220 / 5.59
.245 / 6.22
.720 / 18.28
.970 / 24.64
.495 / 12.57 .505 / 12.83
.003 / 0.08 .007 / 0.18
.090 / 2.29
.150 / 3.81
.980 / 24.89
ORDER CODE: ASI10709
CHARACTERISTICS T
SYMBOL TEST CONDITIONS
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
fs
C
iss
C
oss
C
rss
P
G
ηη
D
ψψ V
= 25 OC
C
NONE
UNITS
ID = 50 mA 125 V
VDS = 50 V V
= 0 V 5.0 mA
GS
VDS = 0 V VGS = 20 V 1.0 µµ A
VDS = 10 V ID = 100 mA 1.0 5.0 V
VDS = 10 V ID = 5 A 3,000 mS
290
VDS = 50 V VGS = 0 V f = 1.0 MHz
130
pF
28
V
= 50 V I
DD
P
= 150 W
out
= 10:1 AT ALL PHASE ANGLES NO DEGRADATION IN OUTPUT POWER
SWR
= 250 mA f = 175 MHz
DQ
Specifications are subject to change without notice.
13
45
13.5
55
dB
%
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