ASI UML500 Datasheet

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone] 1/1

Specifications are subject to change without notice.

CHARACTERISTICS T

C

= 25 OC

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS

BV

CBO

IC = 50 mA 65 V

BV

CES

IC = 50 mA 65 V

BV

EBO

IE = 10 mA 3.5 V

I

CES

VCE = 30 V 15 mA

hFE VCE = 5.0 V IC = 5.0 A 20 200 ---

PG

ηηC

VCE = 40 V PIN = 54 W f = 425 MHz

9.7
50

dB

%

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The is Designed for

FEATURES:

• Input Matching Network

•

• Omnigold™ Metalization System

MAXIMUM RATINGS

IC

43.2 A

V

CBO

65 V

V

CES

65 V

V

EBO

3.5 V

P

DISS

1167 W @ TC = 25 OC

TJ

-65 OC to +200 OC

T

STG

-65 OC to +200 OC

θθJC

0.15 OC/W

PACKAGE STYLE .400 BAL FLG(A)

ORDER CODE: ASI10687

MINIMUM

inches / mm

.045 / 1.14

.380 / 9.65

.125 / 3.18

.210 / 5.33

.070 / 1.78

B
C
D
E
F
G

A

MAXIMUM

.135 / 3.43

.230 / 5.84

.080 / 2.03

.390 / 9.91

inches / mm

H

.420 / 10.67 .430 / 10.92

DIM

K
L

I
J

.895 / 22.73

.058 / 1.47

.905 / 22.99

.065 / 1.65

P

N

M

.395 / 10.03

.115 / 2.92

.405 / 10.29

.130 / 3.30

.002 / 0.05 .006 / 0.15

.230 / 5.84

K

J

I

H

M

L

N

E

C

D

B

G

F

P

FULL R

A

4X.060 R

.770 / 19.56 .830 / 21.08

.215 / 5.46 .235 / 5.97

.055 / 1.40

.645 / 16.38 .655 / 16.64