Specifications are subject to change without notice.
ULBM2TE
NPN SILICON RF POWER TRANSISTOR
The ASI ULBM2TE is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
V
CBO
V
CEO
V
EBO
P
DISS
TJ
T
STG
θθJC
0.40 A
36 V
16 V
4.0 V
5 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
35 OC/W
PACKAGE STYLE TO-39GE
Ø A
F
G
DIM
A
B
C
D
E
F
G
H
MINIMUM
inches / mm
.029 / 0.740
.028 / 0.720
.355 / 9.020
.315 / 8.010
.165 / 4.200
.500 / 12.700
.016 / 0.410
B
E
.200 / 5.080
45°
H
C
Ø D
MAXIMUM
inches / mm
.045 / 1.140
.034 / 0.860
.370 / 9.370
.335 / 8.500
.180 / 4.570
.750 / 19.050
.020 / 0.508
CHARACTERISTICS T
= 25 OC
C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 50 mA 16 V
CEO
BV
IC = 50 mA RBE = 10 Ω 36 V
CES
BV
IE = 1.0 mA 4.0 V
EBO
I
VCB = 15 V 1.0 mA
CBO
hFE VCE = 5.0 V IC = 50 mA 20 200 --Cob VCB = 12.5 V f = 1.0 MHz
P
G
ηη
C
VCE = 12.5 V P
OUT
= 2.0 W f = 470 MHz
10 pF
8.0
dB
55
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
%