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Specifications are subject to change without notice.
ULBM2T
NPN SILICON RF POWER TRANSISTOR
The ASI ULBM2T is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
0.75 A
36 V
16 V
36 V
4.0 V
5 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
V
V
V
V
P
T
IC
CB0
CEO
CES
EBO
DISS
TJ
STG
θθJC
35 OC/W
PACKAGE STYLE TO-39
F
G
.200 / 5.080
.500 / 12.700
DIM
Ø A
MINIMUM
inches / mm
A
B
C
D
E
F
G
H
.029 / 0.740
.028 / 0.720
.335 / 8.510
.305 / 7.750
.240 / 6.100
.016 / 0.407 .020 / 0.508
CB
45°
Ø D
E
H
MAXIMUM
inches / mm
.045 / 1.140
.034 / 0.860
.370 / 9.370
.335 / 8.500
.260 / 6.600
CHARACTERISTICS T
= 25 OC
C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 25 mA 16 V
CEO
BV
IC = 5 mA 36 V
CES
BV
IE = 1.0 mA 4.0 V
EBO
I
VCE = 15 V 1.0 mA
CBO
hFE VCE = 5.0 V IC = 100 mA 20 --Cob VCB = 12 V f = 1.0 MHz
P
G
ηη
C
VCC = 12.5 V P
OUT
= 2.0 W f = 470 MHz
10 pF
6.0
dB
55
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
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