NPN SILICON RF POWER TRANSISTOR
The ASI ULBM10 is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
V
CBO
V
CEO
V
CES
V
EBO
P
DISS
TJ
T
STG
θθJC
58 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
2.5 A
36 V
16 V
36 V
4.0 V
7.0 OC/W
ULBM10
PACKAGE STYLE .280 4L STUD
B
E
F
DIM
A
B
C
D
E
F
G
H
I
J
K
MINIMUM
inches / mm
1.010 / 25.65 1.055 / 26.80
.220 / 5.59
.270 / 6.86
.003 / 0.08
.117 / 2.97
.245 / 6.22 .255 / 6.48
.175 / 4.45
45°
D
G
.572 / 14.53
.640 / 16.26
A
C
H
K
.130 / 3.30
J
I
#8-32 UNC
MAXIMUM
inches / mm
.230 /5.84
.285 / 7.24
.007 / 0.18
.137 / 3.48
.217 / 5.51
.285 / 7.24.275 / 6.99
CHARACTERISTICS T
= 25 OC
C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 20 mA 16 V
CEO
BV
IC = 25 mA 36 V
CES
BV
IE = 10 mA 4.0 V
EBO
I
V
CEO
I
VCE = 10 V 3.0 mA
CES
hFE VCE = 5.0 V IC = 1.0 A 10 --- --Cob VCB = 12.5 V f = 1.0 MHz
P
G
ηηC
= 15 V 2.0 mA
CB
25 pF
VCC = 12.5 V P
OUT
= 10 W f = 470 MHz
7.0
60
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.