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ULBM0.5
NPN SILICON RF POWER TRANSISTOR
The ASI ULBM0.5 is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
V
CBO
V
CEO
V
EBO
P
DISS
TJ
T
STG
θθJC
2.5 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
0.4 A
28 V
12 V
4.0 V
70 OC/W
PACKAGE STYLE .205 4L PILL
G
DIM
A
B
C
D
E
F
G
H
MINIMUM
inches / mm
.976 / 24.800
.976 / 24.800
.028 / 0.700
.106 / 2.700
.039 / 1.000
.004 / 0.100
.200 / 5.100
H
D
B
.138 / 3.500
C
MAXIMUM
inches / mm
1.00 / 25.400
1.00 / 25.400
.031 / 0.800
.139 / 3.400
.047 / 1.200
.006 / 0.150
.208 / 5.300
A
F
E
CHARACTERISTICS T
= 25 OC
C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 25 mA 12 V
CEO
BV
IC = 10 mA 28 V
CES
BV
IE = 5.0 mA 4.0 V
EBO
hFE VCE = 5.0 V IC = 150 mA 20 --- --Cob VCB = 12.5 V f = 1.0 MHz
PG VCC = 12.5 V P
OUT
= 0.5 W f = 470 MHz
4.0 pF
13 dB
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.