ASI UHBS60-1 Datasheet

DESCRIPTION:

ORDER CODE: ASI10672

NPN SILICON RF POWER TRANSISTOR

The ASI UHBS60-1 is Designed for

FEATURES:

•

•

• Omnigold™ Metalization System

MAXIMUM RATINGS

9.0 A
50 V
26 V
50 V

4.0 V

V
V
V
V
P

T

IC

CBO

CEO

CES

EBO

DISS

TJ

STG

190 W @ TC = 25 OC

-65 OC to +200 OC

-65 OC to +150 OC

UHBS60-1

PACKAGE STYLE .230 6L FLG

.430

DIM

A
B
C
D
E
F
G
H
I
J
K
L

.040x45°

4X .025 R

.115

D

E

.125

I

MINIMUM

inches / mm

.355 / 9.02 .365 / 9.27
.115 / 2.92
.075 / 1.91
.225 / 5.72
.090 / 2.29

.720 / 18.29

.355 / 9.02
.004 / 0.10
.120 / 3.05
.160 / 4.06 .180 / 4.57
.230 / 5.84

A

B

C

F

G

H

2XØ.130

J

MAXIMUM

inches / mm

.125 / 3.18
.085 / 2.16
.235 / 5.97

.110 / 2.79
.730 / 18.54
.980 / 24.89.970 / 24.64

.365 / 9.27

.006 / 0.15

.130 / 3.30

.260 / 6.60

L

K

θθJC

0.9 OC/W

CHARACTERISTICS T

= 25 OC

C

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS

BV

IC = 50 mA 50 V

CBO

BV

IC = 50 mA 50 V

CES

BV

IC = 50 mA 26 V

CEO

BV

IE = 10 mA 3.0 V

EBO

I

VCE = 20 V 10 mA

CES

I

VCB = 30 V 5 mA

CBO

hFE VCE = 5.0 V IC = 1.0 A 20 100 ---

Cob VCB = 24 V f = 1.0 MHz 75 pF

PG

ηηC

VCE = 24 V P

= 60 W f = 900 GHz

OUT

7.5
55

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone] 1/1

dB

%

Specifications are subject to change without notice.