ASI UHBS30-1 Datasheet
Specifications are subject to change without notice.
DESCRIPTION:
ORDER CODE: ASI10670
UHBS30-1
NPN SILICON RF POWER TRANSISTOR
The ASI UHBS30-1 is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
V
CBO
V
CEO
V
EBO
P
DISS
TJ
T
STG
θθJC
100 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
9.0 A
50 V
30 V
4.0 V
1.5 OC/W
PACKAGE STYLE .230 6L FLG
.430
DIM
A
B
C
D
E
F
G
H
I
J
K
L
.040x45°
4X .025 R
.115
D
E
.125
I
MINIMUM
inches / mm
.355 / 9.02 .365 / 9.27
.115 / 2.92
.075 / 1.91
.225 / 5.72
.090 / 2.29
.720 / 18.29
.355 / 9.02
.004 / 0.10
.120 / 3.05
.160 / 4.06 .180 / 4.57
.230 / 5.84
A
B
C
F
G
H
2XØ.130
J
MAXIMUM
inches / mm
.125 / 3.18
.085 / 2.16
.235 / 5.97
.110 / 2.79
.730 / 18.54
.980 / 24.89.970 / 24.64
.365 / 9.27
.006 / 0.15
.130 / 3.30
.260 / 6.60
L
K
CHARACTERISTICS T
= 25 OC
C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 50 mA 30 V
CEO
BV
IC = 50 mA RBE = 10 Ω 50 V
CES
BV
IE = 10 mA 4.0 V
EBO
I
VCE = 15 V 5 mA
CBO
I
VCE = 24 V 10 mA
CES
hFE VCE = 5.0 V IC = 1.0 A 10 --- ---
Cob VCB = 25 V f = 1.0 MHz
PG
VCE = 24 V P
OUT
= 30 W f = 900 GHz
ηηC
50 pF
7.5
55
dB
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
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