![](/html/bd/bde2/bde20909541c42fa3522f53eae18069e61b199d2e3df238d0a910a709ac29ab1/bg1.png)
NPN SILICON RF POWER TRANSISTOR
The ASI TVV020 is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
8.0 A
35 V
60 V
4.0 V
V
V
V
P
T
IC
CEO
CES
EBO
DISS
TJ
STG
140 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
TVV020
PACKAGE STYLE .500 4L STUD
G
45°
A
G
H
.622 / 15.80
.720 / 18.29
SS
J
SEATING
PLANE
I
#10-32 UNF
MAXIMUM
inches / mm
.230 / 5.84
.505 / 12.83
.007 / 0.18
.180 / 4.57
.130 / 3.31.100 / 2.54
B
ØC
D
E
F
DIM
A
B
C
D
E
F
G
H
I
J
MINIMUM
inches / mm
1.010 / 25.65 1.050 / 26.67
.220 / 5.59
.495 / 12.57
.003 / 0.08
.160 / 4.06
.415 / 10.54 .425 / 10.80
.250 / 6.35 .290 / 7.37
θθJC
1.5 OC/W
CHARACTERISTICS T
= 25 OC
C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 50 mA 65 V
CBO
BV
IC = 50 mA RBE = 10 Ω 60 V
CER
BV
IC = 50 mA 35 V
CEO
BV
IE = 10 mA 4.0 V
EBO
I
VCB = 50 V 5.0 mA
CES
hFE VCE = 5.0 V IC = 1.0 A 20 120 ---
COB VCB = 30 V f = 1.0 MHz 85 pF
PG
IMD3
VCE = 25 V IC = 2.5 A f = 225 MHz
P
= 14 W
OUT
8.0
-51
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
dB
dBc
Specifications are subject to change without notice.