Specifications are subject to change without notice.
NPN SILICON RF POWER TRANSISTOR
The ASI TVU100 is Designed for
FEATURES:
• Input Matching Network
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
VCB
VCE
P
DISS
TJ
T
STG
140 W @TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
10 A
60 V
35 V
TVU100
PACKAGE STYLE .450 BAL FLG(A)
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
.060x45°
C
E
D
F
K
MINIMUM
inches / mm
.120 / 3.05
.455 / 11.56
.120 / 3.05 .130 / 3.30
.838 / 21.28 .850 / 21.59
1.095 / 27.81
.525 / 13.34 .535 / 13.59
.002 / 0.05
.055 / 1.40 .065 / 1.65
.080 . 2.03
.445 / 11.30
B
G
J
.055 / 1.40
.230 / 5.84
FULL R
A
H
.100x45°
P
M
L
MAXIMUM
inches / mm
.130 / 3.30
.785 / 19.94
.465 / 11.81
1.105 / 28.07
.005 / 0.15
.095 / 2.41
.195 / 4.95
.455 / 11.56
N
θθJC
CHARACTERISTICS T
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 50 mA 35 V
CEO
BV
IC = 50 mA RBE = 10 Ω 60 V
CER
BV
IE = 10 mA 4.0 V
EBO
I
VE = 28 V 5 mA
CES
1.0 OC/W
= 25 OC
C
hFE VCE = 5.0 V IC = 1.0 A 10 100 ---
PGE
VCE = 25 V ICQ = 2 X 100 mA f = 860 MHz
P
= 100 W
OUT
8.5
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
dB