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TVU0.5A
NPN SILICON RF POWER TRANSISTOR
The ASI TVU0.5A is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
V
CBO
V
CEO
V
EBO
P
DISS
TJ
T
STG
θθJC
31.8 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
2.0 A
45 V
25 V
3.5 V
33 OC/W
PACKAGE STYLE .205 4L STUD
D
DIM
B
G
H
J
MINIMUM
inches / mm
.976 / 24.800
A
.976 / 24.800
B
.028 / 0.700
C
D
.161 / 4.100
E
.098 / 2.500
F
.200 / 5.100 .208 / 5.300
G
.004 / 0.100 .006 / 0.150
H
.425 / 10.800
I
.200 / 5.100
J
.138 / 3.500
#8-32UNC
A
C
E
F
MAXIMUM
inches / mm
1.000 / 25.4000
1.000 / 25.4000
.031 / 0.800
.196 / 5.000
.110 / 2.800
.465 / 11.800
2.05 / 5.200
CHARACTERISTICS T
= 25 OC
C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 1.0 mA 45 V
CBO
BV
IC = 20 mA 24 V
CEO
BV
IE = 0.25 mA 3.5 V
EBO
I
VCB = 28 V 0.45 mA
CBO
hFE VCE = 5.0 V IC = 100 mA 15 120 ---
PG
IMD1
VCE = 20 V IC = 150 mA f = 860 MHz
P
= 0.5 W
OUT
9.5
-58
dB
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
dBc