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TVU002
NPN SILICON RF POWER TRANSISTOR
The ASI TVU002 is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
V
CBO
V
CEO
V
EBO
P
DISS
TJ
T
STG
θθJC
15.9 W @ TC = 25 OC
800 mA
45 V
25 V
4.0 V
-65 OC to +200 OC
-65 OC to +150 OC
10 OC/W
PACKAGE STYLE .280 4L STUD
B
E
F
DIM
A
B
C
D
E
F
G
H
I
J
K
MINIMUM
inches / mm
1.010 / 25.65 1.055 / 26.80
.220 / 5.59
.270 / 6.86
.003 / 0.08
.117 / 2.97
.245 / 6.22 .255 / 6.48
.175 / 4.45
45°
D
S
G
.572 / 14.53
.640 / 16.26
A
G
C
H
K
.130 / 3.30
J
I
#8-32 UNC
MAXIMUM
inches / mm
.230 /5.84
.285 / 7.24
.007 / 0.18
.137 / 3.48
.217 / 5.51
.285 / 7.24.275 / 6.99
CHARACTERISTICS T
= 25 OC
C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 10 mA 45 V
CBO
BV
IC = 80 mA 25 V
CEO
BV
IE = 1.0 mA 4.0 V
EBO
I
VCB = 28 V 0.45 mA
CBO
hFE VCE = 20 V IC = 250 mA 10 100 ---
COB VCB = 28 V f = 1.0 MHz 80 pF
PG
IMD
1
VCE = 25 V IC = 410 mA f = 860 MHz
P
= 2.0 W
OUT
10
-60
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
dB
dBc