![](/html/22/224f/224f11ee51cb41e6e20fd0a1fd43118fc4813427ee405e6eb4dbab200e350f10/bg1.png)
查询MT5C2564C-70供应商
Austin Semiconductor, Inc.
64K x 4 SRAM
SRAM
MT5C2564
SRAM MEMORY ARRAY
AVAILABLE AS MILITARY
SPECIFICATIONS
• SMD 5962-88681
• MIL-STD-883
FEATURES
• High Speed: 15, 20, 25, 35, 45, 55, and 70
• Battery Backup: 2V data retention
• Low power standby
• High-performance, low-power, CMOS double-metal
process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE\
• All inputs and outputs are TTL compatible
OPTIONS MARKING
• Timing
15ns access -15
20ns access -20
25ns access -25
35ns access -35
45ns access -45
55ns access -55*
70ns access -70*
• Package(s)
Ceramic DIP (300 mil) C No. 106
Ceramic LCC EC No. 204
• Operating T emperature Ranges
Industrial (-40oC to +85oC) IT
Military (-55oC to +125oC) XT
• 2V data retention/low power L
*Electrical characteristics identical to those provided for the 45ns
access devices.
PIN ASSIGNMENT
(Top View)
24-Pin DIP (C)
(300 MIL)
1
24
2
3
4
5
6
7
8
9
10
11
12
Vcc
23
A15
22
A14
21
A13
20
A12
19
A11
18
A10
17
DQ4
16
DQ3
15
DQ2
14
DQ1
13
WE\
CE\
Vss
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
28-Pin LCC (EC)
A1A0NC
NC
Vss
NC
Vcc
WE\
CE\
A2
A3
A4
A5
A6
A7
10
A8
11
A9
12
3 2 1 28 27
4
5
6
7
8
9
13 14 15 16 17
NC
DQ1
26
A15
25
A14
24
A13
23
A12
22
A11
21
A10
20
DQ4
19
DQ3
18
DQ2
GENERAL DESCRIPTION
The Austin Semiconductor SRAM family employs
high-speed, low-power CMOS and are fabricated using doublelayer metal, double-layer polysilicon technology.
For flexibility in high-speed memory applications,
Austin Semiconductor offers chip enable (CE\) on all organizations. This enhancement can place the outputs in High-Z for
additional flexibility in system design. The x4 configuration
features common data input and output.
Writing to these devices is accomplished when write
enable (WE\) and CE\ inputs are both LOW . Reading is accomplished when WE\ remains HIGH and CE\ goes LOW. The
device offers a reduced power standby mode when disabled.
This allows system designs to achieve low standby power requirements.
These devices operate from a single +5V power supply and all inputs and outputs are fully TTL compatible.
For more products and information
please visit our web site at
www.austinsemiconductor .com
MT5C2564
Rev. 2.0 11/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
![](/html/22/224f/224f11ee51cb41e6e20fd0a1fd43118fc4813427ee405e6eb4dbab200e350f10/bg2.png)
A0
A1
A2
A3
A4
A5
Austin Semiconductor, Inc.
FUNCTIONAL BLOCK DIA GRAM
V
CC
262,144-BIT
MEMORY ARRAY
GND
SRAM
MT5C2564
DQ4
A13
A14
A15
ROW DECODER
COLUMN DECODER
A6 A7 A8 A9 A10 A11 A12
TRUTH TABLE
MODE CE\ WE\ DQ POWER
STANDBY H X HIGH-Z STANDBY
READ L H Q ACTIVE
WRITE L L D ACTIVE
DQ1
CE\
WE\
POWER
DOWN
MT5C2564
Rev. 2.0 11/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
![](/html/22/224f/224f11ee51cb41e6e20fd0a1fd43118fc4813427ee405e6eb4dbab200e350f10/bg3.png)
Austin Semiconductor, Inc.
SRAM
MT5C2564
ABSOLUTE MAXIMUM RA TINGS*
V oltage on Any Pin Relative to Vss..................................-0.5V to +7V
V oltage on Vcc Supply Relative to Vss.............................-0.5V to +7V
Storage Temperature......................................................-65oC to +150oC
Power Dissipation..............................................................................1W
Short Circuit Output Current.........................................................50mA
Lead T emperature (soldering 10 seconds)....................................+260oC
Junction Temperature..................................................................+175oC
*Stresses greater than those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the
operation section of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods
may affect reliability .
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC < TC < 125oC; VCC = 5V +10%)
DESCRIPTION CONDITIONS SYM MIN MAX UNITS NOTES
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
0V<
VIN<V
CC
Output(s) disabled
0V<V
OUT<VCC
I
=-4.0mA V
OH
I
=8.0mA V
OL
V
IL
IH
V
IL
IL
I
O
OH
OL
2.2
V
+0.5
CC
V1
-0.5 0.8 V 1, 2
-10 10 µA
-10 10 µA
2.4 V 1
0.4 V 1
MAX
PARAMETER
Power Supply
Current: Operating
Power Supply
Current: Standby
CONDITIONS
VIL; VCC = MAX
CE\ <
f = MAX = 1/t
Output Open
VIH; All Other Inputs
CE\ >
VIL or > VIH, VCC = MAX
<
f = 0 Hz
V
CE\ >
V
-0.2V; VCC = MAX
CC
V
< VSS +0.2V
IL
> VCC -0.2V; f = 0 Hz
IH
"L" Version Only
(MIN)
RC
SYM -15 -20 -25 -35 -45 UNITS NOTES
I
I
SBT2
I
SBC2
I
SBC2
165 150 140 120 120 mA 3
cc
45 45 40 25 25 mA
20 20 20 20 20 mA
44444mA
CAPACITANCE
DESCRIPTION CONDITIONS SYM MAX UNITS NOTES
Input Capacitance
Output Capacitance
T
= 25oC, f = 1MHz
A
= 5V
V
CC
C
I
C
O
10 pF 4
12 pF 4
MT5C2564
Rev. 2.0 11/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
![](/html/22/224f/224f11ee51cb41e6e20fd0a1fd43118fc4813427ee405e6eb4dbab200e350f10/bg4.png)
SRAM
MT5C2564
Austin Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Note 5) (-55oC < TC < 125oC; VCC = 5V +10%)
DESCRIPTION
READ CYCLE
READ cycle time
Address access time
Chip Enable access time
Output hold from address change
Chip Enable to output in Low-Z
Chip disable to output in High-Z
Chip Enable to power-up time
Chip disable to power-down time
WRITE CYCLE
WRITE cycle time
Chip Enable to end of write
Address valid to end of write
Address setup time
Address hold from end of write
WRITE pulse width
Data setup time
Data hold time
Write disable to output in Low-Z
Write Enable to output in High-Z
SYMBOL
t
RC
t
AA
t
ACE
t
OH
t
LZCE
t
HZCE
t
PU
t
PD
t
WC
t
CW
t
AW
t
AS
t
AH
t
WP
t
DS
t
DH
t
LZWE
t
HZWE
-20
-25-15
MIN MAX MIN MAX MI N MAX MI N MAX MI N MAX UNITS NOTES
15 20 25 35 45 ns
15 20 25 35 45 ns
15 20 25 35 45 ns
33333 ns
33333 ns7
8 10102020ns6, 7
00000 ns4
15 20 25 35 45 ns 4
15 20 25 35 45 ns
12 15 18 30 40 ns
12 15 18 30 40 ns
00000 ns
22255 ns
12 15 17 30 40 ns
7 10122020 ns
00000 ns
00000 ns7
0 7 0 10 0 11 0 20 0 20 ns 6, 7
-35 -45
MT5C2564
Rev. 2.0 11/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4