ASI SD1006 Service Manual

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SD1006

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION:

PACKAGE STYLE TO-39

The ASI SD1006 is a High Frequency
Transistor for General Purpose
Amplifier Applications

.

MAXIMUM RATINGS

IC

V

CEO

V

CBO

P

DISS

3.5 W @ TC = 25 °C

TJ

T

STG

θ

JC

CHARACTERISTICS T

SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS

BV

IC = 5.0 mA 30 V

CEO

BV

IC = 100 µA 50 V

CBO

BV

IE = 100 µA 5.0 V

EBO

I

VCE = 28 V 100 µA

CEO

hFE VCE = 15 V IC = 50 mA 30 300 ---

f

t

Cob VCB = 30 V f = 100 KHz 2.5 3.5 pF

Cib VEB = 0.5 V f = 100 KHz 8.0 10 pF

NF

NB

NF

BB

GVE VCE = 15 V IC = 50 mA f = 216 MHz 7.2 6.8 dB

X

V

MOD

2

NDO

400 mA

30 V
50 V

-65 °C to +200 °C

-65 °C to +200 °C
50 °C/W

C

= 25 °C

VCE = 15 V IC = 50 mA 1500 1800 MHz

VCE = 10 V IC = 10 mA f = 2000 MHz 2.7 dB
VCE = 15 V IC = 50 mA f = 216 MHz 7.0 8.0 dB

= 15 V IC = 50 mA P

CE

V

= 15 V IC = 50 mA P

CE

= +45 dbmV -60 -57 dB

out

= +45 dbmV -60 -50 dB

out

1 = EMITTER 2 = BASE

3 = COLLECTOR

NONE

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone] 1/1

Specifications are subject to change without notice.