ASI NE21935 Service Manual
查询ASINE21935供应商
NPN SILICON HI FREQUNCY TRANSISTOR
DESCRIPTION:
NE21935
The
ASI NE21935
is Designed for
general purpose and small signal
amplifier and oscillator applications up
to 6.0 GHz.
FEATURES INCLUDE:
High frequency 8.0 GH
•
Low noise, 1 dB at 0.5 GHz.
•
MAXIMUM RATINGS:
80 mA
20 V
10 V
1.5 V
= 25 °C
A
-65 °C to +200 °C
-65 °C to +200 °C
V
V
V
P
T
IC
CBO
CEO
EBO
DISS
TJ
STG
580 mW @ T
PACKAGE STYLE .100 4L PILL
θθθθ
JC
CHARACTERISTICS
CBO
EBO
fT
21E
|
SYMBOL
I
I
hFE
CCB
|S
80 °C/W
TC = 25 °C
TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
V
= 8.0 V 1.0
CB
V
= 1.0 V 1.0
EB
V
= 8.0 V IC = 20 mA 30 100 300
CE
V
= 8.0 V f = 1.0 MHz 0.4 1.0
CB
V
= 8.0 V IC = 20 mA 8.0
CE
= 8.0 V IC = 20 mA f = 1.0 GHz
V
CE
f = 2.0 GHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
1 = BASE 3 = COLLECTOR 2& 4 = EMITTER
8.0
15.5
9.0
GHz
REV. A
µA
µµµµ
A
---
pF
dB
1/1
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