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Specifications are subject to change without notice.
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NPN SILICON RF POWER TRANSISTOR
The ASI MLN1030S is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
0.250 A
40 V
28 V
3.5 V
-65 OC to +200 OC
-65 OC to +150 OC
V
V
V
P
T
IC
CBO
CEO
EBO
DISS
TJ
STG
7.0 W @ TC = 25 OC
MLN1030S
PACKAGE STYLE .280 4L STUD
B
E
F
DIM
A
B
C
D
E
F
G
H
I
J
K
MINIMUM
inches / mm
1.010 / 25.65 1.055 / 26.80
.220 / 5.59
.270 / 6.86
.003 / 0.08
.117 / 2.97
.245 / 6.22 .255 / 6.48
.175 / 4.45
45°
D
S
G
A
D
C
H
K
.572 / 14.53
.130 / 3.30
.640 / 16.26
S
J
I
#8-32 UNC
MAXIMUM
inches / mm
.230 /5.84
.285 / 7.24
.007 / 0.18
.137 / 3.48
.217 / 5.51
.285 / 7.24.275 / 6.99
θθJC
CHARACTERISTICS T
20 OC/W
C
= 25 OC
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 1 mA 40 V
CBO
BV
IC = 1 mA 28 V
CEO
BV
IE = 1 mA 3.5 V
EBO
I
VCB = 24 V 0.5 mA
CBO
hFE VCE = 5.0 V IC = 100 mA 20 120 ---
COB VCB = 28 V f = 1.0 MHz
PG
VCE = 20 V ICQ = 150 mA f = 1.0 GHz
P
= 1.0 W
OUT
5.0 pF
9.0
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
dB