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NPN SILICON RF POWER TRANSISTOR
The ASI MLN1030F is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
VCE
P
DISS
TJ
T
STG
500 mA
20 V
--- W
-65 OC to +200 OC
-65 OC to +200 OC
MLN1030F
PACKAGE STYLE .250 2L FLG
A
ØD
DIM
C
B
E
F
G
H
I
J
L
K
MINIMUM
inches / mm
A
B
C
D
E
F
G
H
I
J
K
L
M
N
P
.028 / 0.71
.740 / 18.80
.245 / 6.22
.128 / 3.25
.110 / 2.79
.560 / 14.22 .570 / 14.48
.790 / 20.07
.225 / 5.72
.165 / 4.19 .185 / 4.70
.003 / 0.08
.058 / 1.47
.149 / 3.78
.125 / 3.18
.117 / 2.97
.060 x 45°
CHAMFER
N
M
MAXIMUM
inches / mm
.032 / 0.81
.255 / 6.48
.132 / 3.35
.117 / 2.97
.810 / 20.57
.235 / 5.97
.007 / 0.18
.068 / 1.73
.135 / 3.43.119 / 3.02
.187 / 4.75
P
θθJC
CHARACTERISTICS T
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 1 mA 50 V
CBO
BV
IC = 5 mA 20 V
CEO
BV
IE = 1 mA 3.5 V
EBO
I
VCE = 18 V 1.0 mA
CEO
hFE VCE = 5.0 V IC = 1.0 A 15 120 ---
COB VCB = 28 V f = 1.0 MHz
PG
20 OC/W
= 25 OC
C
VCE = 20 V P
ICQ = 150 mA
= 1.0 W f = 1.0 GHz
OUT
5.0 pF
12
dB
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.