Specifications are subject to change without notice.
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NPN SILICON RF POWER TRANSISTOR
HF75-28S
PACKAGE STYLE .380 STUD
The ASI HF75-28S is Designed for
FEATURES:
• PG = 18 dB min. at 75 W/30 MHz
• IMD3 = -30 dBc max. at 75 W(PEP)
• Omnigold™ Metalization System
MAXIMUM RATINGS
P
T
I
V
V
DISS
T
STG
θθ
C
CB
CE
JC
140 W @ TC = 25 OC
J
-65 OC to +200 OC
-65 OC to +150 OC
10 A
60 V
35 V
1.05 OC/W
CHARACTERISTICS T
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
BV
BV
I
h
CEO
CER
EBO
CES
FE
IC = 50 mA 35 V
IC = 50 mA RBE = 10 Ω 60 V
IE = 10 mA 4.0 V
VE = 28 V 5 mA
VCE = 5.0 V IC = 1.0 A 10 100 ---
= 25 OC
C
DIM
A
B
C
D
E
F
G
H
I
J
.112x45°
B
A
C
E
ØC
D
#8-32 UNC-2A
MINIMUM
inches / mm
.220 / 5.59 .230 / 5.84
.980 / 24.89
.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54
.090 / 2.29 .100 / 2.54
.155 / 3.94 .175 / 4.45
F
E
H
G
MAXIMUM
inches / mm
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45.450 / 11.43
.750 / 19.05
I
J
C
ob
G
PE
IMD
3
VCB = 28 V f = 1.0 MHz 80 pF
VCE = 25 V ICQ = 3.2 A f = 225 MHz
P
= 16 W Vision = -8 dB Snd. = -7 dB
REF
Side Band = -16 dB
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
13.5 14.5
-55
dB
dBc