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NPN SILICON RF POWER TRANSISTOR
The ASI CBSL1 is Designed for UHF
Class A Amplifier Applications in
Cellular Base Station Equipment.
FEATURES:
• Pg = 10 dB min. @ 960 MHz
• P
= 1.0 Watts min. at 960 MHz
1dB
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
V
CBO
V
CEO
V
EBO
P
DISS
TJ
T
STG
7.0 W @ TC = 25 OC
0.25 A
40 V
28 V
3.5 V
-65 OC to +200 OC
-65 OC to +150 OC
O
CBSL1
PACKAGE STYLE .280 4L STUD
A
45°
B
C
DIM
D
E
F
G
MINIMUM
inches / mm
A
B
C
D
E
F
G
H
I
J
K
1.010 / 25.65 1.055 / 26.80
.220 / 5.59
.270 / 6.86
.003 / 0.08
.117 / 2.97
.572 / 14.53
.130 / 3.30
.245 / 6.22 .255 / 6.48
.640 / 16.26
.175 / 4.45
J
K
I
H
#8-32 UNC
MAXIMUM
inches / mm
.230 /5.84
.285 / 7.24
.007 / 0.18
.137 / 3.48
.217 / 5.51
.285 / 7.24.275 / 6.99
CHARACTERISTICS T
= 25 OC
C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 1 mA 40 V
CBO
BV
IC = 1 mA 25 V
CEO
BV
IE = 1 mA 3.5 V
EBO
I
VCB = 24 V 500 µµA
CBO
hFE VCE = 5.0 V IC = 100 mA 20 120 ---
COB VCB = 28 V f = 1.0 MHz
PG
P
1dB
VCC = 24 V ICQ = 125 mA f = 960 MHz
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
5.0 pF
10
1.0
dB
W