ASI BAM120 Service Manual

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NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

ASI BAM120

The
operate in a collector modulated

Power Amplifier Applications up to 150
MHz

.

FEATURES:

= 65 % typ. @ 120 W/150 MHz

• η

C

= 9.0 dB typ. @ 120 W/ 150 MHz

P

•

G

• Omnigold

™ Metalization System

is Designed to

VHF

BAM120

PACKAGE STYLE .500 4L FLG

MAXIMUM RATINGS

12 A
60 V

4.0 V

1.2 °C/W

P

V
V

T

I

CES

EBO

DISS

T

STG

θθθθ

JC

C

140 W @ TC = 25 °C

J

-65 °C to +200 °C

-65 °C to +150 °C

CHARACTERISTICS

SYMBOL

BV
BV
BV

C

CES

CEO

EBO

h

FE

OB

IC = 20 mA 60
IC = 50 mA 32
IE = 5.0 mA 4.0
VCE = 25 V IC = 3.5 A 15 100

VCE = 27 V f = 1.0 MHz 240

TC = 25 °C

NONE

1 = COLLECTOR 2 = BASE

3 & 4 = EMITTER

ORDER CODE: ASI10430

TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS

V
V
V

---

pF

P

G

ηηηη

C

VCC = 27 V P

= 120 W f = 150 MHz

OUT

9.0
65

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone] 1/1

Specifications are subject to change without notice.

dB

%

REV. A