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NPN SILICON RF POWER TRANSISTOR
The ASI AVF100 is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
VCB
VCE
P
DISS
TJ
140 W @ TC = 25 OC
-65 OC to +200 OC
10 A
60 V
35 V
AVF100
PACKAGE STYLE .250 2L FLG (B)
C
B
H
DIM
A
B
C
D
E
F
G
H
I
J
K
MINIMUM
inches / mm
.095 / 2.41 .105 / 2.67
1.050 / 26.67
.245 / 6.22
.120 / 3.05
.552 / 14.02
.790 / 20.07
.003 / 0.08 .007 / 0.18
.052 / 1.32 .072 / 1.83
.120 / 3.05
A
Ø D
F
.210 / 5.33
.100 X 45°
E
G
.088 x 45°
CHAMFER
J
I
MAXIMUM
inches / mm
.255 / 6.48
.140 / 3.56
.572 / 14.53
.810 / 20.57
.285 / 7.24
.130 / 3.30
K
T
STG
θθJC
CHARACTERISTICS T
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 50 mA 35 V
CEO
BV
IC = 50 mA RBE = 10 Ω 60 V
CER
BV
IE = 10 mA 4.0 V
EBO
I
VE = 28 V 5 mA
CES
hFE VCE = 5.0 V IC = 1.0 A 10 100 ---
Cob VCB = 28 V f = 1.0 MHz
PG
ηηC
-65 OC to +150 OC
35 OC/W
= 25 OC
C
VCC = 40 V P
= 100 W f = 1030 - 1090 MHz
OUT
80 pF
10
35
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.