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NPN SILICON RF POWER TRANSISTOR
The ASI AVD250 is Designed for
FEATURES:
• Input Matching Network
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
VCC
P
DISS
TJ
T
STG
600 W @ TC ≤ 80 OC
17.8 A
55 V
-65 OC to +250 OC
-65 OC to +200 OC
AVD250
PACKAGE STYLE .400 2NL FLG
G
A
I
J
K
.193 / 4.90
.450 / 11.43
.125 / 3.18
.025 x 45°
.396 / 10.06
.407 / 10.34
.660 / 16.76
.910 / 23.11
E
N
M
MAXIMUM
inches / mm
.130 / 3.30
.007 / 0.18
.072 / 1.83.052 / 1.32
P
C
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
P
4x .062 x 45°
2X B
ØD
F
H
L
MINIMUM
inches / mm
.020 / 0.51 .030 / 0.76
.100 / 2.54
.376 / 9.55
.110 / 2.79
.395 / 10.03
.640 / 16.26
.890 / 22.61
.395 / 10.03 .415 / 10.54
.004 / 0.10
.118 / 3.00 .131 / 3.33
.230 / 5.84
θθJC
CHARACTERISTICS T
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 10 mA 65 V
CBO
BV
IC = 25 mA RBE = 10 Ω 65 V
CER
BV
IE = 1 mA 3.5 V
EBO
I
VCE = 50 V 25 mA
CES
0.2 OC/W
= 25 OC
C
hFE VCE = 5.0 V IC = 1.0 A 15 120 ---
PG
ηηC
VCC = 50 V P
MHz
= 250 W f = 1025 - 1150
OUT
6.2
40
dB
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
%
Specifications are subject to change without notice.