![](/html/fa/fa06/fa065a2df4376c653f7790f1815b4bcf80a83b0c9554f659cb0158c0e4770c8b/bg1.png)
查询ASI10559供应商
NPN SILICON RF POWER TRANSISTOR
The ASI AVD035P is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
VCB
P
DISS
TJ
T
STG
2.5 A PEAK
55 V
100 W PEAK
-65 OC to +200 OC
-65 OC to +150 OC
AVD035P
PACKAGE STYLE .280 4L PILL (A)
A
.100x45°
ØG
MAXIMUM
inches / mm
.205 / 5.21
.007 / 0.18
.065 / 1.65
.145 / 3.68
F
E
DIM
C
B
D
MINIMUM
inches / mm
A
B
C
D
E
F
G
.095 / 2.41 .105 / 2.67
.195 / 4.95
1.000 / 25.40
.004 / 0.10
.050 / 1.27
.275 / 6.99 .285 / 7.21
θθJC
CHARACTERISTICS T
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 10 mA 65 V
CBO
BV
IC = 10 mA RBE = 10 Ω 65 V
CER
BV
IE = 1 mA 3.5 V
EBO
I
VCE = 50 V 5.0 mA
CES
hFE VCE = 5.0 V IC = 500 mA 15 120 ---
PG
ηηC
1.0 OC/W
= 25 OC
C
VCC = 50 V P
= 35 W f = 1025 - 1150 MHz
OUT
10
35
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.