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NPN SILICON RF POWER TRANSISTOR
The ASI AVD002P is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
VCC
P
DISS
TJ
T
STG
10 W @ TC ≤ 100 OC
250 mA
37 V
-65 OC to +200 OC
-65 OC to +150 OC
AVD002P
PACKAGE STYLE .280 4L PILL (A)
C
B
D
DIM
A
B
C
D
E
F
G
MINIMUM
inches / mm
.095 / 2.41 .105 / 2.67
.195 / 4.95
1.000 / 25.40
.004 / 0.10
.050 / 1.27
.275 / 6.99 .285 / 7.21
A
.100x45°
ØG
MAXIMUM
inches / mm
.205 / 5.21
.007 / 0.18
.065 / 1.65
.145 / 3.68
F
E
θθJC
CHARACTERISTICS T
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 1 mA 45 V
CBO
BV
IC = 5 mA RBE = 10 Ω 45 V
CER
BV
IE = 1 mA 3.5 V
EBO
I
VCE = 35 V 1.0 mA
CES
hFE VCE = 5.0 V IC = 100 A 30 300 ---
PG
ηηC
10 OC/W
= 25 OC
C
VCC = 35 V P
MHz
= 2.0 W f = 1025 – 1150
OUT
9.0
35
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.