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Specifications are subject to change without notice.
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NPN SILICON RF POWER TRANSISTOR
The ASI 2223-12 is Designed for
FEATURES:
• Input Matching Network
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
VCC
P
DISS
TJ
T
STG
33.0 W @ TC ≤ 70 OC
-65 OC to +200 OC
-65 OC to +200 OC
1.5 A
25 V
ASI223-12
PACKAGE STYLE .310 2L FLG
A
.040 x 45°
C
F
J
K
L
P
N
MAXIMUM
inches / mm
R
.120 / 3.05
.306 / 7.77
.318 / 8.08
.572 / 14.53
.320 / 8.13
.006 / 0.15
.072 / 1.83
.131 / 3.33
.230 / 5.84
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
P
R
4x .062 x 45°
2 x B
Ø E
D
G
MINIMUM
inches / mm
.095 / 2.41 .105 / 2.67
.100 / 2.54
.050 / 1.27
.286 / 7.26
.110 / 2.79 .130 / 3.30
.306 / 7.77
.552 / 14.02
.790 / 20.07 .810 / 20.57
.300 / 7.62
.003 / 0.08
.052 / 1.32
.118 / 3.00
H
I
M
.148 / 3.76
.400 / 10.16
.119 / 3.02
θθJC
CHARACTERISTICS T
3.9 OC/W
= 25 OC
C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 15 mA 45 V
CBO
BV
IC = 15 mA 45 V
CER
BV
IE = 1.5 mA 3.5 V
EBO
I
VCE = 22 V 1.5 mA
CES
hFE VCE = 5.0 V IC = 1.0 A 30 300 ---
PG
ηηC
VCC = 22 V P
GHz
= 12 W f = 2.2 – 2.3
OUT
7.5
40
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
dB
%