查询ASAT20供应商
NPN SILICON RF POWER TRANSISTOR
ASAT20
The ASI ASAT20 is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 3.0 A
V
CBO
V
15 V
CEO
V
3.0 V
EBO
P
DISS
37.2 W @ TC = 25 OC
TJ -65 OC to +200 OC
T
-65 OC to +150 OC
STG
θθJC 4.0 OC/W
45 V
PACKAGE STYLE .250 2L FLG(A)
A
E
F
G
.124 / 3.15
.092 / 2.34
Ø .130 NOM.
I
MAXIMUM
inches / mm
.065 / 1.65
.253 / 6.43
.665 / 16.89
.749 / 19.02
.065 / 1.65
.095 / 2.41
.190 / 4.83
.255 / 6.48
.050 x 45°
L
J
K
DIM
.020 x 45°
D
C
B
M
H
MINIMUM
inches / mm
A
B
C
D
E
F
G
H
I
J
K
L
M
.055 / 1.40
.243 / 6.17
.635 / 16.13
.555 / 14.10 .565 / 14.35
.739 / 18.77
.315 / 8.00 .325 / 8.26
.002 / 0.05 .006 / 0.15
.055 / 1.40
.075 / 1.91
.245 / 6.22
CHARACTERISTICS T
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 5.0 mA 45 V
CBO
BV
IC = 5.0 mA 12 V
CEO
BV
IE = 5.0 mA 3.0 V
EBO
= 25 OC
C
hFE VCE = 5.0 V IC = 1.0 A 15 150 ---
COB VCB = 28 V f = 1.0 MHz
PG
VCE = 28 V P
OUT
= 20 W f = 1.65 GHz
ηηC
20 pF
9.2
dB
45
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
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