查询ALR325供应商
NPN SILICON RF POWER TRANSISTOR
ALR325
The ASI ALR325 is Designed for
FEATURES:
• Input Matching Network
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
VCC
P
DISS
TJ
T
STG
θθJC
730 W @ TC = 25 OC
18.75 A
55 V
-65 OC to +250 OC
-65 OC to +200 OC
0.10 OC/W
PACKAGE STYLE .400 2L FLG(A)
H
J
K
.193 / 4.90
.100 / 2.54
A
.040 x 45°
F
M
MAXIMUM
inches / mm
.120 / 3.05
.396 / 10.06
.130 / 3.30
.510 / 12.95
.710 / 18.03
.006 / 0.18
.072 / 1.83.052 / 1.32
C
2xR
P
N
DIM
4x .062 x 45°
2xB
E
D
G
I
L
MINIMUM
inches / mm
A
B
C
D
E
F
G
H
I
J
K
L
M
N
P
.135 / 3.43 .145 / 3.68
.100 / 2.54
.050 / 1.27
.376 / 9.55
.110 / 2.79
.395 / 10.03 .407 / 10.34
.490 / 12.45
.690 / 17.53
.890 / 22.61 .910 / 23.11
.003 / 0.08
.118 / 3.00 .131 / 3.33
.230 / 5.84
CHARACTERISTICS T
= 25 OC
C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 50 mA 65 V
CBO
BV
IC = 50 mA 65 V
CES
BV
IE = 15 mA 3.0 V
EBO
I
VCE = 50 V 30 mA
CES
hFE VCE = 5.0 V IC = 5.0 A 10 --- ---
PG
ηηC
VCC = 45 V P
GHz
= 325 W f = 1.2 to 1.4
OUT
6.5
38
dB
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
%
Specifications are subject to change without notice.