查询AJT085供应商
NPN SILICON RF POWER TRANSISTOR
AJT085
The ASI AJT085 is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 8.0 A
VCC 40 V
P
DISS
TJ -65 OC to +250 OC
T
STG
θθJC 0.75 OC/W
300 W @ TC ≤ 100 OC
-65 OC to +200 OC
PACKAGE STYLE .400 2NL FLG
A
.025 x 45°
G
I
J
K
.193 / 4.90
.450 / 11.43
.125 / 3.18
E
N
M
MAXIMUM
inches / mm
.396 / 10.06
.130 / 3.30
.407 / 10.34
.660 / 16.76
.910 / 23.11
.007 / 0.18
.072 / 1.83.052 / 1.32
P
DIM
4x .062 x 45°
2X B
ØD
C
F
H
L
MINIMUM
inches / mm
A
B
C
D
E
F
G
H
I
J
K
L
M
N
P
.020 / 0.51 .030 / 0.76
.100 / 2.54
.376 / 9.55
.110 / 2.79
.395 / 10.03
.640 / 16.26
.890 / 22.61
.395 / 10.03 .415 / 10.54
.004 / 0.10
.118 / 3.00 .131 / 3.33
.230 / 5.84
CHARACTERISTICS T
= 25 OC
C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 25 mA 55 V
CBO
BV
IC = 25 mA RBE = 10 Ω 55 V
CER
BV
IE = 10 mA 3.5 V
EBO
I
VCE = 35 V 20 mA
CES
hFE VCE = 5.0 V IC = 2.0 A 20 200 ---
PG
ηηC
VCC = 50 V P
MHz
= 85 W f = 960 – 1215
OUT
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
7.5
40
dB
%