ASI 2SC1251 Service Manual
查询2SC1251供应商
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
2SC1251
The
2SC1251
is a Common Emitter
Device Designed for High Linearity
Class A Amplifiers up to 2.0 GHz.
FEATURES INCLUDE:
Direct Replacement for
•
High Gain - 10 dB min. @ 1.0 GHz
•
Gold Metalization
•
NE74020
MAXIMUM RATINGS
300 mA
45 V
5.3W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
33 OC/W
P
V
T
I
DISS
T
STG
θθθθ
C
CB
J
JC
PACKAGE STYLE .204 4L STUD
1 = COLLECTOR 2 & 4 = EMITTER
3 = BASE
CHARACTERISTICS
TC = 25 OC
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
BV
CBO
BV
EBO
h
FE
C
OB
P
G
P
1dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/2
IC = 10 mA 25
IC = 10 mA 45
IE = 1.0 mA 3.0
VCE = 5.0 V IC = 100 mA 20 200
VCB = 15 V f = 1.0 MHz 3.0
VCE = 15 V IC = 100 mA P
f = 1000 MHz
Specifications are subject to change without notice.
= 0.5 W
OUT
13
+27 +29
--pF
dB
dBm
REV. A
V
V
V
TVU005B
S - PARAMETERS
VCE = 20 Volts, ID = 150 mA
FREQ. S11 S21 S12 S22
MHz MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.
100
200
300
400
500
600
700
800
900
1,000
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 2/2
0.735 190 13.65 115 0.025 30 0.364 280
0.840 188 8.15 100 0.025 30 0.275 240
0.860 181 5.75 90 0.025 30 0.280 240
0.857 178 4.25 80 0.030 30 0.285 230
0.855 173 3.50 70 0.035 35 0.300 225
0.850 170 2.80 66 0.035 35 0.310 220
0.850 168 2.45 60 0.040 35 0.320 215
0.850 165 2.20 55 0.045 40 0.330 210
0.855 163 2.00 50 0.050 45 0.340 215
0.860 161 1.75 45 0.055 45 0.350 215
REV. A
Specifications are subject to change without notice.
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