APTM 50 HM 75 SCT Service Manual
www.DataSheet4U.com
APTM50HM75SCT
y
,
r
Full bridge
Series & SiC parallel diodes
MOSFET Power Module
VBUS
CR1A
Q1
G1
S1
G2
S2
NTC1
OUT1 OUT2
CR2A
CR2BQ2CR4B
0/VBUS
CR3A
CR3BCR1B
Q3
G3
S3
CR4A
Q4
G4
S4
NTC2
G3
S3
VBUS
S1
G1
0/VB US
G4
S4
S2
G2
OUT2
OUT1
NTC2
NTC1
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
Drain - Source Breakdown Voltage 500 V
DSS
ID Continuous Drain Current
IDM Pulsed Drain current 184
VGS Gate - Source Voltage ±30 V
R
Drain - Source ON Resistance 75
DSon
PD Maximum Power Dissipation Tc = 25°C 357 W
IAR Avalanche current (repetitive and non repetitive) 46 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 2500
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed
V
R
I
= 500V
DSS
DSon
= 46A @ Tc = 25°C
D
Application
· Motor control
· Switched Mode Power Supplies
· Uninterruptible Power Supplies
Features
· Power MOS 7
- Low R
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
· Parallel SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
· Kelvin source for easy drive
· Very low stray inductance
- Symmetrical design
- Lead frames for power connections
· Internal thermistor for temperature monitoring
· High level of integration
Benefits
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Solderable terminals both for power and signal fo
easy PCB mounting
· Low profile
Tc = 25°C 46
= 80°C 34
T
c
= 75mW max @ Tj = 25°C
®
MOSFETs
DSon
A
mW
mJ
2004
APT website –http://www.advancedpower.com
1–7
APTM50HM75SCT – Rev 1 Ma
APTM50HM75SCT
y
,
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
BV
Drain - Source Breakdown Voltage VGS = 0V, ID = 250µA 500 V
DSS
I
Zero Gate Voltage Drain Current
DSS
R
Drain – Source on Resistance VGS = 10V, ID = 23A
DS(on)
V
Gate Threshold Voltage VGS = VDS, ID = 2.5mA 3 5 V
GS(th)
I
Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±100 nA
GSS
VGS = 0V,V
VGS = 0V,V
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
C
Input Capacitance 5590
iss
C
Output Capacitance 1180
oss
C
Reverse Transfer Capacitance
rss
Qg Total gate Charge 123
Qgs Gate – Source Charge 33
Qgd Gate – Drain Charge
VGS = 0V
= 25V
V
DS
f = 1MHz
= 10V
V
GS
= 250V
V
Bus
= 46A
I
D
= 500V Tj = 25°C 100
DS
= 400V T
DS
= 125°C 500
j
75
85
65
µA
mW
pF
nC
T
Turn-on Delay Time 18
d(on)
T
Rise Time 35
r
T
Turn-off Delay Time 87
d(off)
T
Fall Time
f
E
Turn-on Switching Energy 453
on
E
Turn-off Switching Energy u
off
E
Turn-on Switching Energy 745
on
E
Turn-off Switching Energy u
off
Inductive switching @ 125°C
V
= 15V
GS
= 333V
V
Bus
= 46A
I
D
R
G
= 5W
77
ns
Inductive switching @ 25°C
V
= 15V, V
GS
I
= 46A, RG = 5Ω 726
D
= 333V
Bus
µJ
Inductive switching @ 125°C
V
= 15V, V
GS
= 46A, RG = 5Ω
I
D
= 333V
Bus
µJ
846
u In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Maximum Average Forward Current 50% duty cycle Tc = 85°C 30 A
I
F(AV)
IF = 30A 1.1 1.15
VF Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 60A 1.4
I
= 30A Tj = 125°C
F
= 30A
I
F
= 133V
V
R
di/dt = 200A/µs
= 30A
I
F
= 133V
V
R
di/dt = 200A/µs
Tj = 25°C 24
= 125°C 48
T
j
Tj = 25°C 33
= 125°C 150
T
j
0.9
V
ns
nC
2004
APT website –http://www.advancedpower.com
2–7
APTM50HM75SCT – Rev 1 Ma
APTM50HM75SCT
y
,
Parallel diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Maximum Average Forward Current
I
F(AV)
50% duty cycle
VF Diode Forward Voltage IF = 20A
= 20A, VR = 300V
I
QC Total Capacitive Charge
F
di/dt =800A/µs
Tc = 125°C 20 A
Tj = 25°C 1.6 1.8
= 175°C 2.0 2.4
T
j
V
28 nC
Q Total Capacitance
f = 1MHz, VR = 200V 130
f = 1MHz, V
= 400V 100
R
pF
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
Transistor
R
Junction to Case
thJC
V
RMS Isolation Voltage, any terminal to case t =1 min, Isol<1mA, 50/60Hz
ISOL
Series diode 1.2
Parallel diode
TJ Operating junction temperature range
T
Storage Temperature Range -40 125
STG
0.35
°C/W
1.5
2500 V
-40 150
°C
TC Operating Case Temperature -40 100
Torque Mounting torque To Heatsink M5 4.7 N.m
Wt Package Weight 160 g
Temperature sensor NTC
Symbol Characteristic Min Typ Max Unit
R
Resistance @ 25°C
25
B
T
25/85
= 298.16 K 4080 K
25
R
=
R
T
exp
25
é
æ
ç
B
ê
85/25
ç
25
è
ë
T: Thermistor temperature
ù
ö
11
÷
R
-
TT
: Thermistor value at T
T
ú
÷
ø
û
68
kW
Package outline
2004
APT website –http://www.advancedpower.com
3–7
APTM50HM75SCT – Rev 1 Ma
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