APTM 50 H 35 F Service Manual

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APTM50HM35F

MOSFET Power Module

G1

S1

S3

G3

Full - Bridge

OUT1

VBUS

0/VBUS

OUT2

G2

S2

S4

G4

Absolute maximum ratings

Symbol Parameter Max ratings Unit

V

Drain - Source Breakdown Voltage 500 V

DSS

ID Continuous Drain Current

IDM Pulsed Drain current 396

VGS Gate - Source Voltage ±30 V

R

Drain - Source ON Resistance 35

DSon

PD Maximum Power Dissipation Tc = 25°C 781 W

IAR Avalanche current (repetitive and non repetitive) 51 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 3000

These Devices are sensitive to Electrostatic Discharge. Pr oper Handing Procedures Should Be Followed.

V
R

I

= 500V

DSS

= 35mW max @ Tj = 25°C

DSon

= 99A @ Tc = 25°C

D

Application

· Welding converters

· Switched Mode Power Supplies

· Uninterruptible Power Supplies

· Motor control

Features

· Power MOS 7

- Low R

®

FREDFETs

DSon

- Low input and Miller capacitance

- Low gate charge

- Fast intrinsic reverse diode

- Avalanche energy rated

- Very rugged

· Kelvin source for easy drive

· Very low stray inductance

- Symmetrical design

- M5 power connectors

· High level of integration

Benefits

· Outstanding performance at high frequency operation

· Direct mounting to heatsink (isolated package)

· Low junction to case thermal resistance

· Low profile

Tc = 25°C 99

= 80°C 74

T

c

A

mW

mJ

APT website –http://www.advancedpower.com

1–6

APTM50HM35F– Rev 1 May, 2004

APTM50HM35F

All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

BV

Drain - Source Breakdown Voltage VGS = 0V, ID = 375µA 500 V

DSS

I

Zero Gate Voltage Drain Current

DSS

R

Drain – Source on Resistance VGS = 10V, ID = 49.5A

DS(on)

V

Gate Threshold Voltage VGS = VDS, ID = 5mA 3 5 V

GS(th)

I

Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±150 nA

GSS

VGS = 0V,VDS = 500V T

VGS = 0V,VDS = 400V T

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Input Capacitance 14

C

iss

C

Output Capacitance 2.8

oss

C

Reverse Transfer Capacitance

rss

Qg Total gate Charge 280

Qgs Gate – Source Charge 80

Qgd Gate – Drain Charge

T

Turn-on Delay Time 21

d(on)

T

Rise Time 38

r

T

Turn-off Delay Time 75

d(off)

T

Fall Time

f

E

Turn-on Switching Energy u 2070

on

E

Turn-off Switching Energy v

off

= 0V

V

GS

= 25V

V

DS

f = 1MHz

= 10V

V

GS

= 250V

V

Bus

= 99A

I

D

Inductive switching @ 125°C

= 15V

V

GS

= 333V

V

Bus

I

= 99A

D

= 1W

R

G

Inductive switching @ 25°C

V

= 15V, V

GS

= 99A, RG = 1Ω

I

D

= 333V

Bus

= 25°C 375

j

= 125°C 1500

j

35

0.18

140

93

1690

µA

mW

nF

nC

ns

µJ

E

Turn-on Switching Energy u 3112

on

E

Turn-off Switching Energy v

off

Inductive switching @ 125°C

V

= 15V, V

GS

= 99A, RG = 1Ω

I

D

= 333V

Bus

µJ

2026

Source - Drain diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

IS Continuous Source current

(Body diode)

Tc = 25°C 99
Tc = 80°C 74

A

VSD Diode Forward Voltage VGS = 0V, IS = - 99A 1.3 V

dv/dt Peak Diode Recovery w 15 V/ns

= - 99A

I

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

S

= 250V

V

R

/dt = 200A/µs

di

S

= - 99A

I

S

= 250V

V

R

/dt = 200A/µs

di

S

Tj = 25°C 270

= 125°C 540

T

j

Tj = 25°C 5.2

= 125°C 19.2

T

j

ns

µC

u Eon includes diode reverse recovery.

v In accordance with JEDEC standard JESD24-1.
w dv/dt numbers reflect the limitations of the circuit rather than the device itself.

£ - 99A di/dt £ 700A/µs VR £ V

I

S

Tj £ 150°C

DSS

APT website –http://www.advancedpower.com

2–6

APTM50HM35F– Rev 1 May, 2004