APSemi APS1006ET5, APS1006ET5-1.2, APS1006ET5-1.5, APS1006ET5-1.8 Schematic [ru]

APSemi APS1006
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1.5 MHz, 600mA Synchronous
Step-Down Converter

GENERAL DESCRIPTION FEATURES

The APS1006 is a 1.5MHz constant frequency, slope compensated current mode PWM step­down converter. The device integrates a main switch and a synchronous rectifier for high efficiency without an external Schottky diode. It is ideal for powering portable equipment that runs from a single cell lithium-Ion (Li+) battery. The APS1006 can supply 600mA of load current from a 2.5V to 5.5V input voltage. The output voltage can be regulated as low as 0.6V. The APS1006 can also run at 100% duty cycle for low dropout operation, extending battery life in portable system. Pulse Skipping Mode operation at light loads provides very low output ripple voltage for noise sensitive applications.
The APS1006 is offered in a low profile (1mm) 5-pin, SOT package, and is available in an adjustable version and fixed output voltage of
1.2V, 1.5V and 1.8V.
APPLICATIONS
Cellular and Smart Phones
Microprocessors and DSP Core Supplies
Wireless and DSL Modems
PDAs
MP3 Player
Digital Still and Video Cameras
Portable Instruments
Typical Application
Figure 1. Basic Application Circuit with
APS1006 adjustable version, Vout = 1.8V
High Efficiency: Up to 96%
1.5MHz Constant Switching Frequency
600mA Output Current at V
Integrated Main switch and synchronous
rectifier. No Schottky Diode Required
2.5V to 5.5V Input Voltage Range
Output Voltage as Low as 0.6V
100% Duty Cycle in Dropout
Low Quiescent Current: 300µA
Slope Compensated Current Mode Control
for Excellent Line and Load Transient Response
Short Circuit Protection
Thermal Fault Protection
<1µA Shutdown Current
Space Saving 5-Pin Thin SOT23 package
IN
=3V

EVALUATION BOARD

Standard Demo Board Dimensions (mm)
EV1006ET5-02 60X x 60Y x 1.6Z
Efficiency vs Output Current
0
10
90
80
70
60
50
EFFICIENCY (%)
40
30
20
10
0.1 1 10 100 1000
VIN = 2.7V
VIN = 3.6V
OUTPUT CURRENT (mA
VIN = 4.2V
VOUT = 1.8V TA = 25C
Analog Power Semiconductor 1 of 12 Ver.1.3
APSemi APS1006
Absolute Maximum Rating
Input Supply Voltage ...................... -0.3V to +6V
RUN, V
Voltages .................. -0.3V to VIN+0.3V
FB
(Note 1)
Operating Temperature Range... -40°C to +85°C Junction Temperature
(Note2)
.....................+125°C
SW, Vout Voltages .................. -0.3V to VIN+0.3V Storage Temperature Range .... -65°C to +150°C
Peak SW Sink and Source Current.............. 1.5A Lead Temperature (Soldering, 10s).........+300°C
Package/Order Information
Adjustable Output Version: Fixed Output Versions:
Top View
TOP VIEW
Run
GND
SW
1
MARKING
2
3
TSOT23-5
5
V
OUT
4
V
IN
Part Number Top Mark Temp Range APS1006ET5-1.5 A2XY APS1006ET5-1.8 A3XY
-40°C to +85°C
APS1006ET5-1.2 A4XYB
Top View
TOP VIEW
Run
GND
SW
1
MARKING
2
3
5
V
FB
4
V
IN
TSOT23-5
Part Number Top Mark Temp Range
APS1006ET5 A1XY
(note4)
-40°C to +85°C
(Note 3)
Thermal Resistance
Package ӨJA ӨJC
TSOT23-5 110°C/W
Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired.
T
Note 2:
T
Note 3: Thermal Resistance is specified with approximately 1 square of 1 oz copper. Note 4: XY = Manufacturing Date Code
is calculated from the ambient temperature T
J
= TA + PD x Ө
J
250°C/W
.
JA
:
and power dissipation PD according to the following formula:
A
Analog Power Semiconductor 2 of 12 Ver.1.3
APSemi APS1006
Electrical Characteristics
(VIN =V
= 3.6V, TA = 25°C, Test Circuit Figure 1, unless otherwise noted.)
RUN
(Note 5)
Parameter Conditions MIN TYP MAX unit
Input Voltage Range 2.5 5.5 V
Input DC Supply Current Active Mode Shutdown Mode
Regulated Feedback Voltage
V
=0.5V
FB
V
=0V, VIN=4.2V
FB
270
0.08
400
1.0
TA = +25°C 0.5880 0.6000 0.6120 V TA= 0°C  TA 85°C 0.5865 0.6000 0.6135 V
= -40°C  TA 85°C 0.5850 0.6000 0.6150 V
T
A
VFB Input Bias Current VFB = 0.65V ±30 nA
Reference Voltage Line Regulation
= 2.5V to 5.5V, V
V
IN
= VFB (R2=0) 0.11 0.40 %/V
OUT
APS1006ET5-1.2, -40°C  TA 85°C 1.164 1.200 1.236 V
Regulated Output Voltage
Output Voltage Line Regulation
APS1006ET5-1.5, -40°C  TA 85°C 1.455 1.500 1.545 V APS1006ET5-1.8, -40°C  T
V
= 2.5V to 5.5V, I
IN
OUT
85°C 1.746 1.800 1.854 V
A
=10mA 0.11 0.40 %/V
µA µA
Output Voltage Load Regulation
Maximum Output Current V
Oscillator Frequency VFB=0.6V or V
R
R
of P-CH MOSFET I
DS(ON)
of N-CH MOSFET ISW = -300mA 0.20 0.45
DS(ON)
Peak Inductor Current
SW Leakage V
Output over voltage lockout V
from 10 to 600mA 0.0015 %/mA
I
OUT
= 3.0V 600 mA
IN
=100% 1.2 1.5 1.8 MHz
OUT
= 300mA 0.30 0.50
SW
V
=3V, VFB=0.5V or V
IN
Duty Cycle <35%
= 0V, VSW= 0V or 5V, VIN = 5V ±0.01 ±1 µA
RUN
OVL
= V
– VFB 60 mV
OVL
OUT
=90%
1.20 A
RUN Threshold -40°C  TA 85°C 0.3 0.45 1.5 V
RUN Leakage Current ±0.1 ±1 µA
Note 5: 100% production test at +25°C. Specifications over the temperature range are guaranteed by design and characterization.
Analog Power Semiconductor 3 of 12 Ver.1.3
APSemi APS1006
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Typical Performance Characteristics
(Test Figure 1 above unless otherwise specified)
Efficiency vs Input Voltage
100
95
90
85
Iload = 500 mA
80
75
Iload = 10 mA
70
EFFICIENCY ( %)
65
60
55
50
2 3 4 56
INPUT VOLTAGE (V
Iload = 100 mA
Efficiency vs Output Current
100
90
VIN = 2.7V
80
70
60
50
40
EFFICIENCY ( %)
30
20
10
0
0.1 1 10 100 1000
OUTPUT CURRENT (mA
Efficiency vs Output Current
100
90
VIN = 2.7V
80
70
VIN = 4.2V
60
50
40
EFFICIENCY ( %)
30
20
10
0
0.1 1 10 100 1000
OUTPUT CURRENT (mA
VIN = 4.2V
VIN = 3.6V
VOUT = 1.5V TA = 25C
VIN = 3.6V
VOUT = 2.5V TA = 25C
Efficiency vs Output Current
100
90
VIN = 2.7V
80
70
60
50
40
EFFICIENCY ( %)
30
20
10
0
0.1 1 10 100 1000
OUTPUT CURRENT (mA
Efficiency vs Output Current
100
90
80
70
60
50
EFFICIENCY ( %)
40
30
20
10
0.1 1 10 100 1000
VIN = 2.7V
VIN = 3.6V
OUTPUT CURRENT (mA
Efficiency vs Load Current
100
VIN = 3.6V
90
VOUT = 1.8V TA = 25C
80
70
60
50
EFFICIENCY (%)
40
30
20
10
0.1 1 10 100 1000
VIN = 3.6V
VIN = 4.2V
VOUT = 1.2V TA = 25C
VIN = 4.2V
VOUT = 1.8V TA = 25C
L = 2.2 uH
L = 1.4 uH
L = 10 uH
L = 4.7 uH
LOAD CURRENT (mA
Analog Power Semiconductor 4 of 12 Ver.1.3
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