Apex Microtechnology Corporation EB01 Datasheet

TRIPLE INDEPENDENT LOGIC INTERFACED HALF BRIDGES

MICROTECHNOLOGY

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FEATURES

• COMPATIBLE WITH PWM FREQUENCIES UP TO 30KHZ

• 50V TO 500 V MOTOR SUPPLY

• 20A CONTINUOUS OUTPUT CURRENT

• HCMOS COMPATIBLE SCHMITT TRIGGER LOGIC INPUTS

• SEPARATE EMITTER OUTPUTS FOR NEGATIVE RAIL

CURRENT SENSE

• SLEEP MODE

• WIDE RANGE FOR GATE DRIVE AND LOGIC SUPPLIES

APPLICATIONS

HIGH POWER CIRCUITS FOR DIGITAL CONTROL OF:

• THREE AXIS MOTION USING BRUSH TYPE MOTORS

• THREE PHASE BRUSHLESS DC MOTOR DRIVE

• THREE PHASE AC MOTOR DRIVE

• THREE PHASE STEP MOTOR DRIVE

DESCRIPTION

The EB01 consists of three independent IGBT half bridges
with drivers. The drivers may be interfaced with CMOS or
HCMOS level logic.

EBO1

12

Hin 1

SD

11

Lin 1

10

Half

Bridge

Driver

IGBT

Half
Bridge
Output

13

14

15

HV1

OUT1

E1

V

,Logic Ground

ss

V

,Logic Supply

dd

V 1

cc

Hin 2

Lin2

V 2

cc

Hin3

Lin 3

V 3

cc

9

8

Half

7

6

5

4

3

2

1

Bridge

Driver

Half

Bridge

Driver

IGBT

Half
Bridge
Output

IGBT

Half
Bridge
Output

16

17

18

19

20

21

22

23

24

HVRTN1

HV2

OUT2

E2

HVRTN2

HV3

OUT3

E3

HVRTN3

FIGURE 1. BLOCK DIAGRAM

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EB01

ABSOLUTE MAXIMUM RATINGS

SPECIFICATIONS

ABSOLUTE MAXIMUM RATINGS

HIGH VOLTAGE SUPPLY, HV5 500V
OUTPUT CURRENT, peak1 28A
OUTPUT CURRENT, continuous 20A
DRIVER SUPPLY VOLTAGE, Vcc 20V
LOGIC SUPPLY VOLTAGE, Vdd 20V
LOGIC INPUT VOLTAGE -0.3V to Vdd + 0.3V
POWER DISSIPATION, internal2 179 Watts
THERMAL RESISTANCE TO CASE3 2.1°C/Watt
TEMPERATURE, pin solder, 10s 300°C
TEMPERATURE, junction4 150°C
TEMPERATURE RANGE, storage –65 to +150°C
OPERATING TEMPERATURE, case –25 to +85°C

SPECIFICATIONS

PARAMETER TEST CONDITIONS MIN TYP MAX UNITS

POSITIVE OUTPUT VOLTAGE I

HV=500V, Fpwm=30kHz, L=100 µH
NEGATIVE OUTPUT VOLTAGE " -2.7 2.7 Volts
POSITIVE EDGE DELAY " 1000 n-second
RISETIME " 500 n-second
NEGATIVE EDGE DELAY " 1000 n-second
FALLTIME " 500 n-second
PWM FREQUENCY Set by external circuitry 30 kHz
INPUT IMPEDANCE Set by internal resistors 50 k-ohm

INPUT AND OUTPUT SIGNALS

PIN SYMBOL FUNCTION PIN SYMBOL FUNCTION

1 V
2 Lin3 Low drive logic in 3 14 OUT1 Section 1 output
3 Hin3 High drive logic in 3 15 E1 Section 1 emitter
4 V
5 V
6 Lin2 Low drive logic in 2 18 OUT 2 Section 2 output
7 V
8 Hin2 High drive logic in 2 20 HVRTN2 Section 2 return
9 V
10 Lin1 Low drive logic in 1 22 OUT 3 Section 3 output
11 SD Shut down logic in 23 E3 Section 3 emitter
12 Hin1 High drive logic in 1 24 HVRTN 3 Section 3 return

NOTES: 1. Guaranteed but not tested.

2. Total package power dissipation at 25°C case tempterature with three outputs active.

3. Each IGBT.

4. Long term operation at the maximum junction temperature will result in reduced product life. Lower internal temperature by
reducing internal dissipation or using better heatsinking to achieve high MTTF.

5. Derate the High Voltage Supply V

3 Gate supply 3 13 HV1 High Voltage supply 1

cc

Logic supply 16 HVRTN1 Section 1 return

dd

2 Gate supply 2 17 HV2 High voltage supply 2

cc

Logic ground 19 E2 Section 2 emitter

ss

1 Gate supply 1 21 HV3 High voltage supply 3

cc

INPUT

A logic level input independently controls each IGBT in
the half bridge. A logic level high turns on the IGBT; a logic
level low turns it off. A common shutdown input turns off
all IGBTs when high.

All inputs are Schmitt triggers with the upper threshold at

and the lower threshold at 1/3 Vdd. This comfortably

2/3V

dd

interfaces with CMOS or HCMOS provided that the V
logic family and the EB01 are the same.

TTL families may be used if a pull-up to the logic supply
is added to the TTL gates driving the EBO1, and V
the EB01 is the same supply as the logic supply for the
TTL family.

An open signal connector pulls the shut down input high and
all other inputs low, insuring that all outputs are off.

=20A; Vcc=10.8V , Vdd=5V; 497.3 502.7 Volts

OUT

by -0.133% per °C below 25°C.

s

However, input impedance is 50k on all inputs; therefore, if
one input is open circuited a high radiated noise level could
supuriousy turn on an IGBT.

OUTPUT

Each output section consists of a switching mode IGBT

for the

dd

dd

for

half bridge. Separate HV supply, emitter, and HV return lines
are provided for each section.

The IGBTs are conservatively rated to carry 20A. At 20A
the saturation voltage is 2.7V maximum.

Each IGBT has a high-speed diode connected in anti­parallel. When switching an inductive load this diode will
conduct, and the drop at 20A will be 2.7V maximum.

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