Apex SA01 Datasheet

–IN
+IN

EA OUT

GND

REF

SHDN/
FILTER

B OUT
I

SENSE

+V

S

A OUT

1
2
3
4
5

10

9
8
7
6

+

–

R

LIMIT

=

.2

I

LIMIT

R

LIMIT

R

FILTER

C

FILTER

TOP

VIEW

.1µF
C1

PULSE WIDTH MODULATION AMPLIFIER

MICROTECHNOLOGY

HTTP://WWW.APEXMICROTECH.COM (800) 546-APEX [phone]

FEATURES

• SINGLE SUPPLY OPERATION

• WIDE SUPPLY RANGE — 16-100V

• 20A CONTINUOUS OUTPUT

• PROGRAMMABLE CURRENT LIMIT

• SHUTDOWN CONTROL

• HERMETIC PACKAGE

•2 IN2 FOOTPRINT

APPLICATIONS

• BRUSH TYPE MOTOR CONTROL

• PELTIER CONTROL

• REACTIVE LOADS

• MAGNETIC COILS (MRI)

• ACTIVE MAGNETIC BEARING

• VIBRATION CANCELLING

DESCRIPTION

The SA01 amplifier is a pulse width modulation amplifier that
can supply 2KW to the load. The full bridge output amplifier can
be operated from a single power supply over a wide range of
voltages. An error amplifier is included which can provide gain
for the velocity control loop in brush type motor control appli­cations. Current limit is programmable by a single resistor. A
shutdown input turns off all four drivers of the H bridge output.
A precision reference output is provided for use in offsetting
the error amplifier. The error amplifier can then be scaled for
standard input signals. The amplifier is protected from shorts
to supply or ground. The H bridge output MOSFETs are
protected from thermal overloads by directly sensing the
temperature of the die. The 10-pin hermetic power package
occupies only 2 square inches of board space and is isolated.

BLOCK DIAGRAM

+V

10

7

9
6

8

B OUT
A OUT

I

SENSE

SHDN/
FILTER

7.5V REF OUT

5

3

EA OUT

1

–IN

2

+IN

ERROR

AMP

PWM

SUP/

REF

OUTPUT

DRIVERS

CURRENT

LIMIT

AND

SHUTDOWN

CONTROL

SA01

SA01

∆

USA BeO

TE949311

TYPICAL APPLICATION

37

EA

EA

SHDN/
FILTER

OUT

R

C

I

FILTER

FILTER

+V

IN

C1

.1µF

1

5

2

–IN

7.5V
REF

+IN

SA01

SHUT

DOWN

Motor Driver With Tach Feedback

S

EXTERNALCONNECTIONS Package: PD10/60S

SENSE

PWM

R

+V

LIMIT

S

GND

A

OUT

B

OUT

4810

6

MT

9

4

GND

AS EA OUT (3) GOES MORE POSITIVE, HIGH STATE OF A OUT (6)
INCREASES AND HIGH STATE OF B OUT (9) DECREASES.

APEX MICROTECHNOLOGY CORPORATION • TELEPHONE [phone] • FAX [phone] • ORDERS [phone] • EMAIL [e-mail]

SA01

ABSOLUTE MAXIMUM RATINGS

SPECIFICATIONS

ABSOLUTE MAXIMUM RATINGS

SUPPLY VOLTAGE, +V
OUTPUT CURRENT, peak 30A

S

POWER DISSIPATION, internal 185W
TEMPERATURE, pin solder - 10s 300°C
TEMPERATURE, junction

2

100V

1

150°C
TEMPERATURE, storage –65 to +150°C
OPERATING TEMPERATURE RANGE, case –55 to +125°C
SHUTDOWN VOLTAGE 10V
REFERENCE LOAD CURRENT 10mA

SPECIFICATIONS

PARAMETER TEST CONDITIONS

ERROR AMP INPUT ± 0 to +12V

2

MIN TYP MAX UNITS

ERROR AMP

OFFSET VOLTAGE 10 mV
BIAS CURRENT 5 µA
OFFSET CURRENT 1 µA
COMMON MODE VOLTAGE RANGE
COMMON MODE REJECTION, DC
SLEW RATE 15 V/µS
OPEN LOOP GAIN

4

4

4

+2 +8 V
75 dB

75 dB

GAIN BANDWIDTH PRODUCT 2 MHz

OUTPUT

TOTAL R
EFFICIENCY, 10A OUTPUT VS = 100V 97 %
SWITCHING FREQUENCY 35.3 42 48.7 KHz
CURRENT, continuous
CURRENT, peak

ON

4

4

20 A
30 A

.25 Ω

REFERENCE

VOLTAGE I
VOLTAGE VS. TEMP
OUTPUT CURRENT 5mA
LOAD REGULATION

4

4

= 5mA 7.46 7.50 7.54 V

REF

Full temperature range 50 PPM/°C

20 50 PPM/mA

LINE REGULATION 1 PPM/V

POWER SUPPLY

VOLTAGE Full temperature range 16 50 100 V
CURRENT I
CURRENT, shutdown I

= 0, I

OUT

= 0 25 mA

REF

= 0 76 90 mA

REF

SHUTDOWN

TRIP POINT .18 .22 V
INPUT CURRENT 100 nA

THERMAL

2

RESISTANCE, junction to case Full temp range, for each transistor 1.0 °C/W
RESISTANCE, junction to air Full temperature range 12 °C/W
TEMPERATURE RANGE, case Meets full range specifications –25 +85 °C

NOTES: 1. Each of the two active output transistors can dissipate 125W, however the N-channel will be about 1/3 of the total dissipated

power. Internal connection resistance is .05Ω.

2. Unless otherwise noted: TC = 25°C.

3. Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation to
achieve high MTTF. For guidance, refer to the heatsink data sheet.

4. Guaranteed but not tested.

CAUTION

The SA01 is constructed from MOSFET transistors. ESD handling procedures must be observed.
The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or

subject to temperatures in excess of 850°C to avoid generating toxic fumes.

APEX MICROTECHNOLOGY CORPORATION • 5980 NORTH SHANNON ROAD • TUCSON, ARIZONA 85741 • USA • APPLICATIONS HOTLINE: [phone]