Apex PB50 Datasheet
MICROTECHNOLOGY
HTTP://WWW.APEXMICROTECH.COM (800) 546-APEX (800) 546-2739
FEATURES
• WIDE SUPPLY RANGE — ±30V to ±100V
• HIGH OUTPUT CURRENT — Up to 2A Continuous
• VOLTAGE AND CURRENT GAIN
• HIGH SLEW RATE — 50V/µs Minimum
• PROGRAMMABLE OUTPUT CURRENT LIMIT
• HIGH POWER BANDWIDTH — 160 kHz Minimum
• LOW QUIESCENT CURRENT — 12mA Typical
POWER BOOSTER AMPLIFIER
PB50
APPLICATIONS
• HIGH VOLTAGE INSTRUMENTATION
• Electrostatic TRANSDUCERS & DEFLECTION
• Programmable Power Supplies Up to 180V p-p
DESCRIPTION
The PB50 is a high voltage, high current amplifier designed
to provide voltage and current gain for a small signal, general
purpose op amp. Including the power booster within the
feedback loop of the driver amplifier results in a composite
amplifier with the accuracy of the driver and the extended
output voltage range and current capability of the booster. The
PB50 can also be used without a driver in some applications,
requiring only an external current limit resistor to function
properly.
The output stage utilizes complementary MOSFETs, providing symmetrical output impedance and eliminating secondary breakdown limitations imposed by Bipolar Junction Transistors. Internal feedback and gainset resistors are provided
for a pin-strappable gain of 3. Additional gain can be achieved
with a single external resistor. Compensation is not required
for most driver/gain configurations, but can be accomplished
with a single external capacitor. Although the booster can be
configured quite simply, enormous flexibility is provided through
the choice of driver amplifier, current limit, supply voltage,
voltage gain, and compensation.
This hybrid circuit utilizes a beryllia (BeO) substrate, thick
film resistors, ceramic capacitors and semiconductor chips to
maximize reliability, minimize size and give top performance.
Ultrasonically bonded aluminum wires provide reliable interconnections at all operating temperatures. The 8-pin TO-3
package is electrically isolated and hermetically sealed using
one-shot resistance welding. The use of compressible isolation washers voids the warranty.
TYPICAL APPLICATION
C
F
Figure 1. Inverting
composite amplifier.
EQUIVALENT SCHEMATIC
Q1
IN
4
GAIN
7
COM
5
COMP
8
6.2K
50K 3.1K
Q4
Q9
EXTERNAL CONNECTIONS
CL
3
TOP VIEW
COM
+Vs
IN
4
5
3
Q2
OUT
COMP
Q5
Q7
R
CL
C
C
Q6
Q10
2
1
8
+Vs
Q3
OUT
1
2
CL
Q8
–Vs
6
R
R
V
I
IN
APEX MICROTECHNOLOGY CORPORATION • TELEPHONE (520) 690-8600 • FAX (520) 888-3329 • ORDERS (520) 690-8601 • EMAIL prodlit@apexmicrotech.com
+15V
OP
AMP
–15V
F
COM
+Vs
IN
PB50
–Vs
R
CL
OUT
C
C
R
R
L
G
–Vs
6
7
GAIN
R
G
PB50
ABSOLUTE MAXIMUM RATINGS
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS
SUPPLY VOLTAGE, +VS to –V
OUTPUT CURRENT, within SOA 2A
S
POWER DISSIPATION, internal at TC = 25°C
200V
1
35W
INPUT VOLTAGE, referred to common ±15V
TEMPERATURE, pin solder—10 sec max 300°C
TEMPERATURE, junction
1
150°C
TEMPERATURE, storage –65 to +150°C
OPERATING TEMPERATURE RANGE, case –55 to +125°C
SPECIFICATIONS
PARAMETER TEST CONDITIONS
INPUT
OFFSET VOLTAGE, initial ±.75 ±1.75 V
OFFSET VOLTAGE, vs. temperature Full temperature range –4.5 –7 mV/°C
INPUT IMPEDANCE, DC 25 50 kΩ
INPUT CAPACITANCE 3pF
CLOSED LOOP GAIN RANGE 3 10 25 V/V
GAIN ACCURACY, internal Rg, Rf AV = 3 ±10 ±15 %
GAIN ACCURACY, external Rf AV = 10 ±15 ±25 %
PHASE SHIFT F = 10kHz, AVCL = 10, CC = 22pF 10 °
F = 200kHz, AVCL = 10, CC = 22pF 60 °
OUTPUT
VOLTAGE SWING Io = 2A VS–11 VS –9 V
VOLTAGE SWING Io = 1A VS–10 VS –7 V
VOLTAGE SWING Io = .1A VS–8 VS –5 V
CURRENT, continuous 2 A
SLEW RATE Full temperature range 50 100 V/µs
CAPACITIVE LOAD Full temperature range 2200 pF
SETTLING TIME to .1% RL = 100Ω, 2V step 2 µs
POWER BANDWIDTH VC = 100Vpp 160 320 kHz
SMALL SIGNAL BANDWIDTH CC = 22pF, AV = 25, Vcc = ±100 100 kHz
SMALL SIGNAL BANDWIDTH CC = 22pF, AV = 3, Vcc = ±30 1 MHz
2
MIN TYP MAX UNITS
POWER SUPPLY
VOLTAGE, ±V
CURRENT, quiescent VS = ±30 9 12 mA
3
S
Full temperature range ±30
5
±60 ±100 V
VS = ±60 12 18 mA
VS = ±100 17 25 mA
THERMAL
RESISTANCE, AC junction to case
4
Full temp. range, F > 60Hz 1.8 2.0 °C/W
RESISTANCE, DC junction to case Full temp. range, F < 60Hz 3.2 3.5 °C/W
RESISTANCE, junction to air Full temperature range 30 °C/W
TEMPERATURE RANGE, case Meets full range specifications –25 25 85 °C
NOTES: 1. Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation
to achieve high MTTF (Mean Time to Failure).
2. The power supply voltage specified under typical (TYP) applies, TC = 25°C unless otherwise noted.
3. +VS and –VS denote the positive and negative supply rail respectively.
4. Rating applies if the output current alternates between both output transistors at a rate faster than 60Hz.
5. +VS must be at least 15V above COM, –VS must be at least 30V below COM.
CAUTION
The PB50 is constructed from MOSFET transistors. ESD handling procedures must be observed.
The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or
subject to temperatures in excess of 850°C to avoid generating toxic fumes.
APEX MICROTECHNOLOGY CORPORATION • 5980 NORTH SHANNON ROAD • TUCSON, ARIZONA 85741 • USA • APPLICATIONS HOTLINE: 1 (800) 546-2739
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