Apex PA45 Datasheet

HIGH VOLTAGE POWER OPERATIONAL AMPLIFIER
MICROTECHNOLOGY
HTTP://WWW.APEXMICROTECH.COM (800) 546-APEX (800) 546-2739
FEA TURES
• MONOLITHIC MOS TECHNOLOGY
• LOW COST
• HIGH VOLTAGE OPERATION—150V
• HIGH SLEW RATE—27V/µs
• HIGH POWER—5A, 85W DISSIPATION
APPLICATIONS
• PA AUDIO
• MOTOR DRIVE
• NOISE CANCELLATION
DESCRIPTION
The PA45 is a high power monolithic MOSFET operational amplifier that achieves performance levels unavailable even in many hybrid amplifier designs. Inputs are protected from excessive common mode and differential mode voltages as well as static discharge. The safe operating area (SOA) has no second breakdown limitations and can be observed with all type loads by choosing an appropriate current limiting resistor. External compensation provides the user flexibility in choosing optimum gain and bandwidth for the application.
This circuit utilizes a beryllia (BeO) substrate to minimize thermal resistance. Ultrasonically bonded aluminum wires provide reliable interconnections at all operating tempera­tures. The 8-pin TO-3 package is hermetically sealed and electrically isolated. The use of compressible isolation wash­ers and/or improper mounting torque will void the product warranty.
EQUIVALENT SCHEMATIC
PA45
PATENTED
TYPICAL APPLICATION
+80
R
C
C
3
2
V
I
4
PA45
R
I
5
6
Horizontal Deflection Coil Amplifiers
Horizontal deflection amplifiers require both high speed and low distortion. The speed at which current can be changed in a deflection coil is a function of the voltage available from the op amp. In this application an 80 volt power supply is used for the retrace polarity to provide a 7 µSec retrace time, half of which is required for amplifier slewing. This circuit can perform 15.75 KHz deflection in up to 50µH coils at up to 5A p-p.
C
7
R
CL
8
1
–20
±2.5A 7µSec Retrace
C
F
R
D
R
F
YOKE
R
S
3
+V
S
D2
D4
–IN
5 4
+IN
–V
S
6
APEX MICROTECHNOLOGY CORPORATION • TELEPHONE (520) 690-8600 • FAX (520) 888-3329 • ORDERS (520) 690-8601 • EMAIL prodlit@apexmicrotech.com
Q3
Q11
Q12
D3
D1
Q24
Q8
Q13
CC1
D5
2
CC2
7
Q21Q20
D7
Q2
Q5 Q6
Q14
Q7
Q9 Q10
Q15
Q16
Q17
Q19
OUTPUT DRIVE
8
1
CURRENT SENSE
EXTERNAL CONNECTIONS
+V
4
+IN
C
C
R
C
C IS NPO RATED
C
FOR FULL SUPPLY VOLTAGE.
–IN
5
–V
S
CC1
S
3
TOP VIEW
6
CC2
8
DRIVE
OUTPUT
R
CL
2
7
CURRENT
SENSE
1
OUTPUT
PHASE
COMPENSATION
Gain C
10 10pF 1K
1 68pF 1K
C
R
C
PA45
ABSOLUTE MAXIMUM RATINGS
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS
SUPPLY VOLTAGE, +VS to –V OUTPUT CURRENT, continuous within SOA 5A POWER DISSIPATION, continuous @ TC = 25°C 85W INPUT VOLTAGE, differential ±16 V INPUT VOLTAGE, common mode ±V TEMPERATURE, pin solder – 10 sec 300°C TEMPERATURE, junction 150°C TEMPERATURE, storage –65 to +150°C TEMPERATURE RANGE, powered (case) –55 to +125°C
S
150V
S
SPECIFICATIONS
PARAMETER TEST CONDITIONS INPUT
OFFSET VOLTAGE, initial 510mV OFFSET VOLTAGE, vs. temperature Full temperature range 10 50 µV/°C OFFSET VOLTAGE, vs supply 815µV/V OFFSET VOLTAGE, vs time 2 µV kh BIAS CURRENT, initial 20 BIAS CURRENT, vs supply 2 pA/V OFFSET CURRENT, initial 200 pA INPUT IMPEDANCE, DC 10 INPUT CAPACITANCE 5pF COMMON MODE, voltage range ±VS–10 V COMMON MODE REJECTION, DC 90 106 dB NOISE, broad band 10kHz BW, RS = 1K 10 µV RMS
GAIN
OPEN LOOP at 15Hz 94 106 dB GAIN BANDWIDTH PRODUCT @ 1MHz POWER BANDWIDTH CC = 10pF, 130V p-p, RL = 8 66 kHz PHASE MARGIN
RL = 500, CC = 10pF 4.5 MHz Full temp range, CC = 68pF, RL = 10
1
60 °
MIN TYP MAX UNITS
100
11
pA
OUTPUT
VOLTAGE SWING IO = 5A ±VS–10 ±VS–8 V CURRENT, continuous 5 A SETTLING TIME to .1% 10V step, AV = –10 2 µs SLEW RATE CC = 10pF, RL = 8 27 V/µs CAPACITIVE LOAD AV = +1, CC = 68pF 10 nF RESISTANCE, no load RCL = 0 150
POWER SUPPLY
VOLTAGE CURRENT, quiescent 30 50 mA
THERMAL
RESISTANCE, AC junction to case RESISTANCE, DC junction to case RESISTANCE, junction to air Full temperature range 30 °C/W TEMPERATURE RANGE, case Meets full range specifications –25 +85 °C
NOTES: 1. Unless otherwise noted TC = 25°C, CC = 10pF, RC = 1K. DC input specifications are ± value given. Power supply voltage is
CAUTION
3
2
typical rating.
2. Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation to achieve high MTTF. For guidance, refer to heatsink data sheet.
3. Derate maximum supply voltage .5 V/°C below case temperature of 25°C. No derating is needed above TC = 25°C.
The PA45 is constructed from MOSFET transistors. ESD handling procedures must be observed. The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or
subject to temperatures in excess of 850°C to avoid generating toxic fumes.
See Note 3 ±15 ±50 ±75 V
F > 60Hz 1.3 °C/W F < 60Hz 1.5 °C/W
APEX MICROTECHNOLOGY CORPORATION • 5980 NORTH SHANNON ROAD • TUCSON, ARIZONA 85741 • USA • APPLICATIONS HOTLINE: 1 (800) 546-2739
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