Apex PA40 Datasheet

HIGH VOLTAGE POWER OPERATIONAL AMPLIFIER

MICROTECHNOLOGY

HTTP://WWW.APEXMICROTECH.COM (800) 546-APEX [phone]

PRELIMINARY

FEATURES

• MONOLITHIC MOS TECHNOLOGY

• LOW COST

• HIGH VOLTAGE OPERATION—350V

• LOW QUIESCENT CURRENT—2mA

• NO SECOND BREAKDOWN

• HIGH OUTPUT CURRENT—120 mA PEAK

APPLICATIONS

• TELEPHONE RING GENERATOR

• PIEZO ELECTRIC POSITIONING

• ELECTROSTATIC TRANSDUCER & DEFLECTION

• DEFORMABLE MIRROR FOCUSING

DESCRIPTION

The PA40 is a high voltage monolithic MOSFET operational
amplifi er achieving performance features previously found
only in hybrid designs while increasing reliability. Inputs are
protected from excessive common mode and differential
mode voltages. The saf e operating area (SOA) has no second
breakdown limitations. External compensation provides the
user fl exibility in choosing optimum gain and bandwidth
for the application.
The PA40 is packaged in Apex's 7 LEAD TO220 package.
The metal back of the package is tied to –Vs. The 15 mil
minimum spacing of the TO220 package is adequate to
stand-off the 350V rating of the PA40. The user must insure
that a minimum of 11 mils spacing is maintained between
pins for the circuit board artwork. If spacing is less than 11
mils, the voltage must be derated.

TYPICAL APPLICATION

140V

IN6300A

15V

2.5K + 15

100K2.67K

.22

PA40

PA40 GRAPHIC HERE

The PA40 is set for a gain of 38.5 boosting the 2.33V signal
to 90V. The recommended compensation for gains above 30
is used. If capacitiv e loading is at least 330pF at all times, the
recommended snubber network may be omitted.

EQUIVALENT SCHEMATIC

3

+V

I

OUT

–V

12

S

5

S

Q1

Q5Q4

1

–IN

D2 D3 D4 D5

2

+IN

Q11

Q12

EXTERNAL CONNECTIONS

D1

7

COMP
COMP

8

SUB

Q6

Q8

Q13

Q2

Q3

Q10

Q14

MUR130

–140V

3.3pF

.22

2.2K

27

100

330pf

MUR130

90Vrms

1234 567

-IN

+VS

-VS

OUT

COMP

COMP

+ IN

PHASE COMPENSATION
Gain C

1 18pF 2.2K

10 10pF 2.2K
30 3.3pF 2.2K

R

C

C

10K 10K

7

ICL8038

8

*

* 1.5 µF @ 16Hz

1.2 µF @ 20Hz

1110

54

–15V

MUR120

6

2

IN6300A

82K

MUR120

Telephone Ring Generator

APEX MICROTECHNOLOGY CORPORATION • TELEPHONE [phone] • FAX [phone] • ORDERS [phone] • EMAIL [e-mail]

1

PA40

ABSOLUTE MAXIMUM RATINGS

SPECIFICATIONS

ABSOLUTE MAXIMUM RATINGS

SUPPLY VOLT A GE, +VS to –V
OUTPUT CURRENT, continuous within SOA 60 mA

S

350V

OUTPUT CURRENT, peak 120 mA
POWER DISSIPATION, continuous @ TC = 25°C 18W
INPUT VOLTAGE, differential ±16 V
INPUT VOLTAGE, common mode ±V
TEMPERATURE, pin solder – 10 sec 220°C

S

TEMPERATURE, junction2 150°C
TEMPERATURE, storage –65 to +150°C
TEMPERATURE RANGE, powered (case) –40 to +125°C

SPECIFICATIONS

PA44

PARAMETER TEST CONDITIONS1 MIN TYP MAX UNITS
INPUT

OFFSET VOLTAGE, initial 15 30 mV
OFFSET VOLT A GE, vs. temperature

4

Full temperature range 70 130 µV/°C
OFFSET VOLTAGE, vs supply 20 32 µV/V
OFFSET VOLTAGE, vs time 75 µV kh
BIAS CURRENT, initial 50 2

00

pA
BIAS CURRENT, vs supply 2 20 pA/V
OFFSET CURRENT, initial 50 200 pA
INPUT IMPEDANCE, DC 101

1

INPUT CAPACITANCE 5 pF
COMMON MODE, voltage range ±VS–
COMMON MODE REJECTION, DC VCM
NOISE, broad band 10kHz BW, RS
NOISE, low frequency 1-10 Hz 1

±90V DC 84 94 dB

=

1K 5

=

2 V

1

0

µV p-p

10

µV RMS

GAIN

OPEN LOOP at 15Hz RL =
BANDWIDTH, open loop 1.6 MHz
POWER BANDWIDTH CC =
PHASE MARGIN Full temperature range 60 °

5K 94 106 dB

0pf, 280V p-p 26 kHz

1

OUTPUT

VOLTAGE SWING IO =
CURRENT, peak

5

0mA ±VS–12

4

±VS–10

V

120 mA
CURRENT, continuous 60 mA
SETTLING TIME to .1% CC =
SLEW RATE CC =
CAPACITIVE LOAD AV =
RESISTANCE6, n
RESISTANCE6, 20

POWER SUPPLY

VOLT AGE

o

load RCL = 0 150

m

A load RCL =

3

See Note 3 ±50 ±150 ±175 V

0pF, 10V step, AV = –10 12 µs

1

PEN 40 V/µs

O

1 10 nF

+

0

25

CURRENT, quiescent 1.6 2.0 mA

THERMAL

ANCE, AC junction to case F > 6

RESIST

ANCE, DC junction to case F < 6

RESIST

0Hz 3.7 4.3 °C/W

0Hz 5.6 6.8 °C/W
RESISTANCE, junction to air Full temperature range 74 °C/W
TEMPERATURE RANGE, case Meets full range specifi cations –25 +85 °C

NOTES: 1. Unless otherwise noted TC = 25°C, CC = 18pF, RC = 2.2K. DC input specifi cations are ± value given. Power supply voltage

is typical rating.

2. Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation
to achieve high MTTF.

3. Derate maximum supply voltage .5 V/°C below case temperature of 25°C. No derating is needed above TC

4. Sample tested by wafer to 95%.

= 25°C.

5. Guaranteed but not tested.

CAUTION

The PA40 is constructed from MOSFET transistors. ESD handling procedures must be observed.

APEX MICROTECHNOLOGY CORPORATION • 5980 NORTH SHANNON ROAD • TUCSON, ARIZONA 85741 • USA • APPLICATIONS HOTLINE: [phone]